4 results
Bias Temperature Instability (BTI) in high-mobility channel devices with high-k dielectric stacks: SiGe, Ge, and InGaAs
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- Journal:
- MRS Advances / Volume 1 / Issue 49 / 2016
- Published online by Cambridge University Press:
- 23 May 2016, pp. 3329-3340
- Print publication:
- 2016
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- Article
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On the Electrical Characterization of High-ĸ Dielectrics
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- Journal:
- MRS Bulletin / Volume 27 / Issue 3 / March 2002
- Published online by Cambridge University Press:
- 31 January 2011, pp. 222-225
- Print publication:
- March 2002
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- Article
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Measurement Technique, Oxide Thickness and Area Dependence of Soft-Breakdown
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- Journal:
- MRS Online Proceedings Library Archive / Volume 592 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 337
- Print publication:
- 1999
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- Article
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Impact of temperature and breakdown statistics on reliability predictions for ultrathin oxides
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- Journal:
- MRS Online Proceedings Library Archive / Volume 592 / 1999
- Published online by Cambridge University Press:
- 10 February 2011, 295
- Print publication:
- 1999
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- Article
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