2 results
Passivation by N Implantation of the SiO2/SiC Acceptor Interface States: Impact on the Oxide Hole Traps and the Gate Oxide Reliability
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1246 / 2010
- Published online by Cambridge University Press:
- 01 February 2011, 1246-B09-01
- Print publication:
- 2010
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Contact resistivity of Al/Ti ohmic contacts on p-type ion implanted 4H- and 6H-SiC.
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- Journal:
- MRS Online Proceedings Library Archive / Volume 742 / 2002
- Published online by Cambridge University Press:
- 11 February 2011, K6.2
- Print publication:
- 2002
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- Article
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