TiO2 is one of the most promising photoanodes for solar-hydrogen conversion by water splitting. Recently, hydrothermally synthetic rutile TiO2 nanorods (NRs) show outstanding photoelectrochemical (PEC) performance in water splitting because of its large surface area, fast carrier transport, and short diffusion length. However, light absorption and carrier transport conflict. Few have investigated the dependence of PEC performance on NR length. This study examines how different TiO2 NR lengths grown on an FTO substrate affects their PEC performance when splitting water. The results show that the optimal absorption length of rutile TiO2 NRs is 3.75 μm. However, under simulated solar illumination (AM1.5 G), the maximum PEC efficiency of these TiO2 NRs is 0.33% at a length of 500 nm. This suggests that carrier transport is the most important variable for improving PEC efficiency.

The real-time electronic performance of a gallium nitride nanowire-based field effect transistor was investigated at five-minute intervals over thirty minutes of continuous irradiation by Xenon-124 relativistic heavy ions. An initial current surge that resulted in device improvement rather than device failure was observed. The current surge, and subsequent electronic behavior, was modeled using a combined thermionic emission-tunnelling approach, leading to information about barrier height, carrier concentrations, expected temperature behavior, and tunnelling.

We present a facile approach for growing radially oriented and dense ZnO nanorods and nanoneedles on the commercially available nylon fabrics by a simple, two-step wet chemical route. The samples were characterized by scanning electron microscopy (SEM), thermogravimetric analysis (TGA), UV-Vis transmission spectroscopy, and wettability measurements. It was observed that the morphology of the resulting ZnO nanostructures strongly depended on the hydrothermal growth conditions. Excellent UV blocking activities were observed for ZnO nanorods containing nylon textiles in the wavelength region of 280-400 nm. Superhydrophobicity was achieved, for both ZnO nanorods and nanoneedles treated nylon fabric, upon 10mM 1-dodecanethiol treatment. ZnO nanostructures were durably attached to the nylon fabric after stirring 2 h in deionized water.

Composite PVA/ZnO-nanorods fibers, synthesized through co-axial flux extrusion exhibit higher anisotropic photonic properties, both in absorption and emission, as a result of the collective alignment of the ZnO nanorods along the main axis of the PVA fiber. This photonic anisotropy is triggered by a synergistic interaction between the PVA matrix, stretched above Tg, and cooled down under strain. Compared with non-elongated fibers that present an isotropic emission, composite fibers previously submitted to a tensile stress absorb selectively UV emission when the polarized laser beam is parallel to the main axis of the fiber. In addition, their photoluminescence is also anisotropic, with a waveguide behavior along the fiber’s main axis.

Silicon nanowires are becoming more important because of increasing requirements of the small scale and dense integration of devices. We report a top-down fabrication method for silicon nanowires using high-energy ion beam irradiation of bulk p-type silicon followed by electrochemical etching. Silicon nanowires with a diameter of ∼50nm have been fabricated and densely patterned nanowire arrays fabricated in different resistivity silicon wafers. With a suitable support structure, free standing silicon nanowires are also achieved. We investigate results depending on silicon wafer resistivity and location within the irradiated area.

We study on electrical and light emitting characteristics of ZnO nanorods array when an electric field is applied in lateral direction to the axis of ZnO nanorods. ZnO nanorods grown on an insulator substrate are isolated with each other, i.e. there is no continuous nucleation layer of ZnO at the base of nanorods. When the applied lateral electric field is weak, no electric current and no light emission are observed. When the electric field becomes strong, however, an electric current begins to flow and bluish white light is emitted in the form of many streaks. These light streaks start from cathode and travel in all directions.

A combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.

Al2O3 was deposited on silicon nanowire (SiNW) arrays by atomic layer deposition (ALD) as a passivation layer to reduce surface recombination velocity. As a result, effective minority carrier lifetime was improved from 1.82 to 26.2 μs. From this result, the relative low-surface recombination rate of 2.73 cm/s was obtained from a calculation using one-dimensional device simulation (PC1D). The performance of SiNW solar cells was also simulated by considering the surface recombination velocity on the side of SiNWs using two-dimensional device simulation. It was found that Al2O3 deposited by ALD can improve open-circuit voltage of SiNW solar cells even if the structure has a high-aspect ratio and large surface area. Therefore, improvement in the performance of SiNW solar cells can be expected.

The reduction of the active cell size to the nanoscale is crucial for the improvement of the phase change memory devices (PCM) based on Ge-Sb-Te (GST) alloys. The self-assembly of Au catalyzed Ge1Sb2Te4 (GST-124) nanowires (NWs) has been achieved by metal organic chemical vapor deposition. The atomic arrangement of the NWs has been investigated and the stacking sequence has been identified, by combining the direct observation by High Angle Annular Dark Field (HAADF) imaging and simulations. It has been assessed that Ge and Sb atoms can randomly occupy the same sites in the crystal lattice, despite the adverse predictions of the theoretical models elaborated for the bulk material.