Research Article
Modeling of Extended Defects in Silicon
- Published online by Cambridge University Press: 15 February 2011, 3
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Transient Enhanced Diffusion of Dopants in Preamorphised Si Layers
- Published online by Cambridge University Press: 15 February 2011, 11
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Transient Enhanced Diffusion of Boron in Silicon:The Interstitial Flux
- Published online by Cambridge University Press: 15 February 2011, 23
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Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low Energy High Dose As+ Implanted Si
- Published online by Cambridge University Press: 15 February 2011, 29
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Modeling of Dislocation Loop Growth and Transient Enhanced Diffusion in Silicon for Amorphizing Implants
- Published online by Cambridge University Press: 15 February 2011, 35
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Boron Transient Enhanced Diffusion in Heavily Phosphorus Doped Silicon
- Published online by Cambridge University Press: 15 February 2011, 41
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Raman Spectroscopy of Ion-Implanted Silicon
- Published online by Cambridge University Press: 15 February 2011, 47
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Defect Diffusion During Annealing of Low-Energy Ion-Implanted Silicon
- Published online by Cambridge University Press: 15 February 2011, 53
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Ab Initio Pseudopotential Calculations of Carbon Impurities In SI
- Published online by Cambridge University Press: 15 February 2011, 59
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Effects of Interstitial Clustering on Transient Enhanced Diffusion of Boron in Silicon
- Published online by Cambridge University Press: 15 February 2011, 65
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Ion Beam Injected Point Defects in Crystalline Silicon: Migration, Interaction and Trapping Phenomena
- Published online by Cambridge University Press: 15 February 2011, 71
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The Effect of Impurity Content and Ion Mass on the Depth Profiles of Vacancy-Type Defects in MeV Implanted Si
- Published online by Cambridge University Press: 15 February 2011, 83
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Diffuse X-Ray Scattering Study of Defects Created by KeV Ion Implants In Si
- Published online by Cambridge University Press: 15 February 2011, 89
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Effects of Vacancy-Type Defects on Electrical-Activation of P+ Implanted into Silicon
- Published online by Cambridge University Press: 15 February 2011, 95
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Modeling of Damage Evolution During Ion Implantation Into Silicon: A Monte Carlo Approach
- Published online by Cambridge University Press: 15 February 2011, 101
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An Electronic Stopping Power Model in Single-Crystal Silicon From a Few KeV to Several MeV
- Published online by Cambridge University Press: 15 February 2011, 107
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Heat and Mass Transport Induced by Collision Cascades
- Published online by Cambridge University Press: 15 February 2011, 113
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Mask-Edge Distributions Produced by 80 KeV As+ Ion Implantation Into Si
- Published online by Cambridge University Press: 15 February 2011, 119
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Dose Rate Effects During Damage Accumulation in Silicon
- Published online by Cambridge University Press: 15 February 2011, 125
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Charge State Defect Engineering of Silicon During Ion Implantation
- Published online by Cambridge University Press: 15 February 2011, 131
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