Delta-doped boron marker layers in silicon have been used to test further the relationship between B transient enhanced diffusion (TED) and the flux of silicon interstitials released during the annealing stage following self implantation. We present new data which address a number of questions raised by the present models. We show that in our experiments bulk trapping of interstitials is significant only for low implant fluences (˜1012 cm2). The origin of the observed diffusion-like profiles for the interstitial flux is instead found to lie in local trapping within the δ-doped layers themselves. Boron trapped in immobile clusters may be associated with Si interstitials in approximately a 1:1 ratio; nevertheless this trapping contribution alone may not entirely account for the observed gradient. We suggest that some part of the observed TED response with depth is attributable to local trapping of silicon interstitials within the boron doped layers.