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Stress Effects on As Activation in Si

  • Chihak Ahn (a1) and Scott T Dunham (a2)

Abstract

We studied stress effects on As activation in silicon using density functional theory. Based on lattice expansion coefficient, we calculated formation energy change due to applied stress and plotted the stress dependence of AsmV concentration. We found that biaxial stress results in minimal impact on As activation, which is consistent with experimental observation by Sugii et al. [J. Appl. Phys. 96, 261 (2004)], who found no significant change in As activation under tensile stress.

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Keywords

Stress Effects on As Activation in Si

  • Chihak Ahn (a1) and Scott T Dunham (a2)

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