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Room-Temperature Migration of Ion-Implanted Boron in Silicon

  • E. J. H. Collait (a1), K. Weemers (a1), D. J. Gravesteijn (a1), J. G. M. van Berkum (a2) and N. E. B. Cowern (a1)...

Abstract

Room temperature migration and clustering behaviour of implanted boron into silicon has been investigated by performing ion implantation of the 11B isotope into MBE-grown in-situ 10B-doped epitaxial Si-layers. We, for the first time, show that a fraction of the implanted boron migrates very deep into the bulk of the Si with substitutional 10B acting as trap centers for the migrating 11B.

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Room-Temperature Migration of Ion-Implanted Boron in Silicon

  • E. J. H. Collait (a1), K. Weemers (a1), D. J. Gravesteijn (a1), J. G. M. van Berkum (a2) and N. E. B. Cowern (a1)...

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