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Integration of Semiconductor and Magnetic Bubble Devices: Soi on Garnet

Published online by Cambridge University Press:  28 February 2011

D.W. Greve ,
M.H. Kryder  and
P.H.L. Rasky
D.W. Greve
Affiliation:
Carnegie—Mellon University, Dept. of Electrical and Computer Engineering, Schenley Park, Pittsburgh, PA 15213
M.H. Kryder
Affiliation:
Carnegie—Mellon University, Dept. of Electrical and Computer Engineering, Schenley Park, Pittsburgh, PA 15213
P.H.L. Rasky
Affiliation:
Carnegie—Mellon University, Dept. of Electrical and Computer Engineering, Schenley Park, Pittsburgh, PA 15213
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Abstract

Silicon on insulator (SOI) technology makes it possible to fabricate semiconductor devices on foreign substrates. In this paper, we present results for a process in which fieldeffect transistors are fabricated in recrystallized polysilicon on a magnetic bubble substrate. We report on the characteristics of the field effect transistors and the effect of the necessary processing steps on the magnetic properties of the substrate. A memory constructed in this hybrid technology would have very high density, multiple detectors for high speed, and direct logic level outputs.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 375
Copyright
Copyright © Materials Research Society 1986

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References

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