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Integration of Semiconductor and Magnetic Bubble Devices: Soi on Garnet
Published online by Cambridge University Press: 28 February 2011
Abstract
Silicon on insulator (SOI) technology makes it possible to fabricate semiconductor devices on foreign substrates. In this paper, we present results for a process in which fieldeffect transistors are fabricated in recrystallized polysilicon on a magnetic bubble substrate. We report on the characteristics of the field effect transistors and the effect of the necessary processing steps on the magnetic properties of the substrate. A memory constructed in this hybrid technology would have very high density, multiple detectors for high speed, and direct logic level outputs.
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- Copyright © Materials Research Society 1986