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Improved Soi Films By High Dose Oxygen Implantation and Lamp Annealing

  • G. K. Celler (a1), P. L. F. Hemment (a2), K. W. West (a1) and J. M. Gibson (a1)

Abstract

Ion beam synthesis of a buried SiO2 layer is an attractive silicon-on-insulator technology for high speed CMOS circuits and radiation hardened devices. We demonstrate here a new annealing procedure at 1405°C that produces silicon films of excellent quality, essentially free of oxygen precipitates and with sharp interfaces between the Si and the SiO2.

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