Skip to main content Accessibility help

High Quality Non-Alloyed Pt Ohmic Contacts to P-Type GaN Using Two-Step Surface Treatment

  • Ja-Soon Jang (a1), Seong-Ju Park (a1) and Tae-Yeon Seong (a2)


Two-step surface-treatment is introduced to obtain low resistance Pt contacts to ptype GaN. The first step is performed after the mesa etching process using buffered oxide etch (BOE) and ammonium sulfide [(NH4)2Sx]. This is followed by the second step using BOE. The Pt contact, which was treated sequentially using ultrasonically boiled BOE (10 min) and boiled (NH4)2Sx (10 min), produces a specific contact resistance of 3.0 (±3.8)×10-5 Ωcm2. However, the contact, that was simply BOE-treated, yields 3.1 (±1.1)×10-2 Ωcm2. This indicates that the two-step surface treatment is promising technique for obtaining high quality ohmic contacts to p-GaN. Investigation of the electronic transport mechanisms using current-voltage-temperature (I-V-T) data indicates that thermionic field emission is dominant in the surface-treated Pt contacts.



Hide All
1. Nakamura, S., Mukai, T., and Senoh, M., J. Appl. Phys. 76, 8189 (1994).
2. Nakamura, S., Senoh, M., Iwasa, N., Yamada, T., Matsushita, T., Kiyoku, H., and Sugimoto, Y., Jpn. J. Appl. Phys. 35, L217 (1996).
3. Khan, M.A., Kuznia, J.N., Bhattarai, A.R. and Olson, D.T., Appl. Phys. Lett. 62 1786 (1993).
4. Pankove, J., Chang, S.S., Lee, H.C., Molnar, R.J., Mustakas, T.D. and Zeghbroeck, B. Van, IEDM 94–389 (1994).
5. Bermudez, V. M., J. Appl. Phys. 80, 1190 (1996).
6. Jang, J. S., Park, K. H., Jang, H. K., Kim, H. G., and Park, S. J., J. Vac. Sci. Technol. B 16, 3105 (1998).
7. Mori, T., Kozawa, T., Ohwaki, T., Taga, Y., Nagai, S., Yamasaki, S., Asami, S., Shibata, N., and Koike, M., Appl. Phys. Lett. 69, 3537 (1996).
8. Cao, X. A., Pearton, S. J., Ren, F., and Lothian, J. R., Appl. Phys. Lett. 73, 942 (1998).
9. Lee, J. L., Kim, J. K., Lee, J. W., Park, Y. J., and Kim, T. I, Sol. Stat. Electron. 43, 435 (1999).
10. Kim, J. K, Lee, J. L., Lee, J. W., Shin, H. E., Park, Y. J., and Kim, T. I, Appl. Phys. Lett. 73, 2953 (1998).
11. Rhoderick, E.H. and Williams, R.H., Metal-Semiconductor Contacts (Clarendon, Oxford 1988).
12. Pankove, J.I., Bloom, S., and Harbeke, G., RCA Rev. 36, 163 (1975).
13. Sheu, J. K., Su, Y. K., Chi, G. C., Jou, M. J., and Chang, C. M., Appl. Phys. Lett. 72, 3317 (1998).
14. Jang, J. S., and Seong, T. Y. (unpublished).
15. Yu, A.Y.C., Solid State Electron. 13, 239 (1970)
16. Hattori, K. and Izumi, Y., J. Appl. Phys. 53, 6906 (1982).
17. Jang, J. S., Chang, I. S., Kim, H. K., Seong, T-Y., Lee, S. H., and Park, S. J., Appl. Phys. Lett. 74, 70 (1999).
18. Jang, J. S., Park, S. J., and Seong, T. Y., J. Vac. Sci. Technol.B 1999 (in press).


Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed