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Helium Induced Cavities in Silicon: Their Formation, Microstructure and Gettering Ability

  • J. R. Kaschny (a1), P. F. P. Fichtner (a2), A. Muecklich (a1), U. Kreissig (a1), R. A. Yankov (a1), R. Koegler (a1), A. B. Danilin (a3) and W. Skorupa (a1)...

Abstract

The formation of cavity microstructures in silicon following helium implantation (10 or 40 keV; 1×1015, l×1016 and 5×1016 cm−2) and annealing (800 °C) is investigated by means of Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry and Channeling (RBS/C), and Elastic Recoil Detection (ERD). The processes of cavity nucleation and growth are found to depend critically on the implanted He concentration. For a maximum peak He concentration of about 5×1020 cm−3 the resulting microstructure appears to contain large overpressurized bubbles whose formation cannot be accounted by the conventional gas-release model and bubble-coarsening mechanisms predicting empty cavities. The trapping of Fe and Cu at such cavity regions is studied by Secondary Ion Mass Spectrometry (SIMS).

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Helium Induced Cavities in Silicon: Their Formation, Microstructure and Gettering Ability

  • J. R. Kaschny (a1), P. F. P. Fichtner (a2), A. Muecklich (a1), U. Kreissig (a1), R. A. Yankov (a1), R. Koegler (a1), A. B. Danilin (a3) and W. Skorupa (a1)...

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