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GaN 20-mm Diameter Ingots Grown from Melt-Solution by Seeded Technique

Published online by Cambridge University Press:  03 September 2012

V.A. Sukhoveyev ,
V.A. Ivantsov ,
I.P. Nikitina ,
A.I. Babanin ,
A.Y. Polyakov ,
A.V. Govorkov ,
N.B. Smirnov ,
M.G. Mil'vidskii  and
V.A. Dmitriev
V.A. Sukhoveyev
Affiliation:
Crystal Growth Research Center, 29 Ligovsky Pr., 193036 St. Petersburg, Russian Federation
V.A. Ivantsov
Affiliation:
TDI, Inc., 8660 Dakota Dr., Gaithersburg, MD 20877, U.S.A Ioffe Institute, 26 Polytechnicheskaya Str., 194021 St. Petersburg, Russian Federation
I.P. Nikitina
Affiliation:
Ioffe Institute, 26 Polytechnicheskaya Str., 194021 St. Petersburg, Russian Federation
A.I. Babanin
Affiliation:
Ioffe Institute, 26 Polytechnicheskaya Str., 194021 St. Petersburg, Russian Federation
A.Y. Polyakov
Affiliation:
Institute of Rare Metals, 5 B.Tolmachevsky, 109017 Moscow, Russian Federation
A.V. Govorkov
Affiliation:
Institute of Rare Metals, 5 B.Tolmachevsky, 109017 Moscow, Russian Federation
N.B. Smirnov
Affiliation:
Institute of Rare Metals, 5 B.Tolmachevsky, 109017 Moscow, Russian Federation
M.G. Mil'vidskii
Affiliation:
Institute of Rare Metals, 5 B.Tolmachevsky, 109017 Moscow, Russian Federation
V.A. Dmitriev
Affiliation:
TDI, Inc., 8660 Dakota Dr., Gaithersburg, MD 20877, U.S.A
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Abstract

In this paper, we describe the seeded growth of ∼20 mm diameter 15 mm long GaN ingots from the melt-solution. This is the first successful attempt to conduct growth of GaN boule-crystals. GaN ingots were grown from Ga-based melt in the temperature range of 800-1000°C at less than 2 atm ambient pressure. Growth was performed at ∼2 mm/hr growth rate. X-ray diffraction revealed polycrystalline structure of the ingots. Homoepitaxial GaN layers were deposited by HVPE technique on the substrates, which were fabricated from the grown GaN ingots.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W6.6
Copyright
Copyright © Materials Research Society 1999

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References

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