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Formation of Silicon on Insulator Structures By Implanted Nitrogen

Published online by Cambridge University Press:  28 February 2011

L. Nesbit ,
S. Stiffler ,
G. Slusser  and
H. Vinton
L. Nesbit
Affiliation:
IBM General Technology Division, Essex Junction, VT
S. Stiffler
Affiliation:
IBM General Technology Division, Essex Junction, VT
G. Slusser
Affiliation:
IBM General Technology Division, Essex Junction, VT
H. Vinton
Affiliation:
IBM General Technology Division, Essex Junction, VT
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Abstract

The formation of a silicon-on-insulator (SOI) structure by implanting a high dose of N+ ions to form a buried Si3N4 layer is studied by transmission electron microscopy (TEM) and by secondary ion mass spectroscopy (SIMS). The SOI structure is formed by implanting silicon wafers with 7.5x1017 N+ ions/cm2 at 160 keV and at wafer temperatures of 400, 500, or 600°C. The implanted wafers are subsequently annealed at 1200°C for times ranging from 10 minutes to 2 hours. The microstructures and nitrogen distributions of the asimplanted and post-annealed wafers are examined in order to elucidate the development of the final microstructure.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 273
Copyright
Copyright © Materials Research Society 1986

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References

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