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Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources

  • A.J. Ptak (a1), K.S. Ziemer (a2), L.J. Holbert (a1), C.D. Stinespring (a2) and T.H. Myers (a3)...

Abstract

Evidence is presented that nitrogen plasma sources utilizing a pyrolytic boron nitride liner may be a significant source of B contamination during growth and processing. Auger electron spectroscopy analysis performed during nitridation of sapphire indicate the resulting layers contain a significant amount of BN. The formation of Al1−xBxN would explain the observation of a lattice constant several percent smaller than AlN as measured by reflection high-energy electron diffraction. The presence of cubic inclusions in layers grown on such a surface may be related to the segregation of BN during the nitridation into its cubic phase.

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Formation of BN and AlBN During Nitridation of Sapphire Using RF Plasma Sources

  • A.J. Ptak (a1), K.S. Ziemer (a2), L.J. Holbert (a1), C.D. Stinespring (a2) and T.H. Myers (a3)...

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