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Electronic Raman Scattering from Mg-Doped Wurtzite GaN

Published online by Cambridge University Press:  03 September 2012

K.T. Tsen ,
C. Koch ,
Y. Chen ,
H. Morkoc ,
J. Li ,
J.Y. Lin  and
H.X. Jiang
K.T. Tsen
Affiliation:
Department of Physics and Astronomy Arizona State University, Tempe, AZ 85287
C. Koch
Affiliation:
Department of Physics and Astronomy Arizona State University, Tempe, AZ 85287
Y. Chen
Affiliation:
Department of Physics and Astronomy Arizona State University, Tempe, AZ 85287
H. Morkoc
Affiliation:
Department of Electrical Engineering Virginia Commonwealth University, Richmond, VA 23284
J. Li
Affiliation:
Department of Physics Kansas State University, Manhattan, KS 66506
J.Y. Lin
Affiliation:
Department of Physics Kansas State University, Manhattan, KS 66506
H.X. Jiang
Affiliation:
Department of Physics Kansas State University, Manhattan, KS 66506
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Abstract

Electronic Raman scattering experiments have been carried out on both MBE and MOCVD-grown Mg-doped wurtzite GaN samples. Aside from the expected Raman lines, a broad structure (FWHM ≅ 15cm−1) observed for the first time at around 841cm−1 isattributed to the electronic Raman scattering from neutral Mg impurities in Mg-dopedGaN. From the analysis of the temperature-dependence of this electronic Ramanscattering signal binding energy of the Mg impurities in wurtzite GaN has been found to be Eb ≅ 172 ± 20meV. These experimental results demonstrate that the energy between the ground and first excited states of Mg impurities in wurtzite GaN is about 3/5 of its binding energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W11.42
Copyright
Copyright © Materials Research Society 1999

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