Hostname: page-component-84b7d79bbc-dwq4g Total loading time: 0 Render date: 2024-07-26T05:32:59.265Z Has data issue: false hasContentIssue false
  • English
  • Français

Effects of Beam Current Density on Ion Beam Synthesis OF SiC

Published online by Cambridge University Press:  21 March 2011

D.H. Chen ,
S.P. Wong  and
J.K.N. Lindner
D.H. Chen
Affiliation:
Dept. of Electronic Engineering and Materials Science and Technology Research CentreThe Chinese University of Hong Kong, Hong Kong, China
S.P. Wong
Affiliation:
Dept. of Electronic Engineering and Materials Science and Technology Research CentreThe Chinese University of Hong Kong, Hong Kong, China E-mail: spwong@ee.cuhk.edu.hk
J.K.N. Lindner
Affiliation:
Universität Augsburg, Institut für Physik, D-86135 Augsburg, Germany
Get access

Abstract

Thin SiC layers were synthesized by high dose C implantation into silicon using a metal vapor vacuum arc ion source at various conditions. Characterization of the ion beam synthesized SiC layers was performed using various techniques including x-ray photoelectron spectroscopy (XPS), Fourier transform infrared (FTIR) absorption, and Raman spectroscopy. The XPS results showed that for samples with over-stoichiometric implant doses, if the implant beam current density was not high enough, even after prolonged thermal annealing at high temperatures, the as-implanted gaussian-like carbon depth profile remained unchanged. However, if the implant beam current density was sufficiently high, there was significant carbon redistribution during annealing, so that a thicker stoichiometric SiC layer can be formed after annealing. The XPS and Raman results also showed that there were carbon clusters formed in the as-implanted layers for the low beam current density implanted samples, while the formation of such carbon clusters was minimal in the high beam current density as-implanted samples. The effect of beam current density on the fraction of different bonding states of the implanted carbon atoms was studied.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 680: Symposium E – Wide Bandgap Electronics , 2001 , E9.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Monkoc, H., Strite, S., Gao, G.B., Lin, M.E., Sverdlov, B., and Burns, M., J. Appl. Phys. 76, 3 (1994).Google Scholar
2. Border, J.A., Picraux, S.T. and Beezhold, W., Appl. Phys. Lett. 18, 509 (1971).Google Scholar
3. Strane, J.W., Lee, S.R., Stein, H.J., Picraux, S.T., Matanable, J.K. and Mayer, J.W., J. Appl. Phys. 72, 637 (1996).Google Scholar
4. Volz, K., Lindner, J.K.N., Stritzker, B.. Nucl. Instr. and Meth. B120, 133 (1996).Google Scholar
5. Martin, P., Daudin, B., Dupuy, M., Ermolieff, A., Olivier, M., Papon, A.M. and Rolland, G., J. Appl. Phys. 67, 2908 (1990).Google Scholar
6. Nejim, A., Hemment, P.L.F., and Stoemenos, J., Appl. Phys. Lett. 66, 2646 (1995).Google Scholar
7. Yan, H., Kwok, R.W.M. and Wong, S.P., Applied Suface Science 92, 61 (1995).Google Scholar
8. Yan, H., Kwok, R.W.M., Wong, S.P., Diamond and Related Materials 5, 556 (1996).Google Scholar
9. Wong, S.P., Ho, L.C., Dihu Chen, Guo, W.S., Yan, H., Kwok, R.W.M., Mat. Res. Soc. Symp. Proc. Vol. 438, 277 (1997).Google Scholar
10. Chen, Dihu, Wong, S.P., Cheung, W.Y., Wu, W., Luo, E.Z., Xu, J.B., Wilson, I.H., and Kwok, R.W.M., Appl. Phys. Lett. 72, 1926 (1998)Google Scholar
11. Wong, S.P., Chen, Dihu, Ho, L.C. and Yan, H., Kwok, R.W.M., Nucl. Instr. and Meth. B140, 70 (1998).Google Scholar
12. Chen, Dihu, Cheung, W.Y., Wong, S.P., Nucl. Instr. and Meth. B 148, 589 (1999).Google Scholar
13. Brown, I.G., Gavin, J.E., and MacGill, R.A., Appl. Phys. Lett. 47, 358 (1985).Google Scholar
14. Riche-chudoba, A., Soukiassian, P., Jaussaud, C., and Dupont, S., Phys. Rev. B 51, 1430 (1995).Google Scholar
15. Diaz, Javier, Paolicelli, Guido, Ferrer, Salvador, and Comin, Fabio, Phys. Rev. B 54, 8064 (1996).Google Scholar
16. Spinella, C., Priolo, F., Puglisi, R.A., Lombardo, S., Campisano, S.U., Nucl. Instr. And Metho. B120, 198 (1996).Google Scholar