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Effect of Atomic Bonding on Defect Production in Collision Cascades

  • K. Nordlund (a1), R. S. Averback (a1) and T. Diaz de la Rubia (a2)

Abstract

We study the mechanisms of damage production during ion irradiation using molecular dynamics simulations of 400 eV -10 keV collision cascades in four different materials. The materials Al, Si, Cu and Ge are contrasted to each other with respect to the mass, melting temperature and crystal structure. The results show that the crystal structure clearly has the strongest effect on the nature of the damage produced, and elucidate how the open crystal structure affects the nature of defects produced in silicon.

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Effect of Atomic Bonding on Defect Production in Collision Cascades

  • K. Nordlund (a1), R. S. Averback (a1) and T. Diaz de la Rubia (a2)

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