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A Comprehensive Analytic Model of Accumulation-Mode Mosfet's in Polysilicon Thin Films

Published online by Cambridge University Press:  28 February 2011

S. S. Ahmed  and
Dae M. Kim
S. S. Ahmed
Affiliation:
Technology and Development Laboratory, Intel Corporation, Inc., Aloha, Oregron 97007
Dae M. Kim
Affiliation:
Oregon Graduate Center, 19600 N.W. Von Neumann Dr., Beaverton, Oregon 97006–1999
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Abstract

The performance of MOSFET's fabricated in LPCVD polysilicon thin films and operating in accumulation mode is modeled analytically. The model quantitatively explains reported device characteristics. Specifically, measured temperature coefficient of current, drive and leakage current, transconductance, drain admittance and ON/OFF current ratio are described in terms of inherent structural and electronic properties of polysilicon. The role of grain boundary hydrogenation in effectino the device performance is highliohted and ouantified.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 447
Copyright
Copyright © Materials Research Society 1986

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References

REFERENCES

1.Malhi, S. D. S. et al., IEEE Trans. Electron Devices, ED–32, 258 (1985).Google Scholar
2.Ahmed, S. S., Kim, D. M. and Shichijo, H., IEEE Electron evice Lett., EDL–6, 313 (1985).Google Scholar
3.Kim, D. M., Khondker, A. N., Ahmed, S. S. and Shah, R. R., IEEE Trans. Electron Devices, ED–31, 480 (1984).Google Scholar
4.Sze, S. M., Physics of Semiconductor Devices, John Wiley, New York 1981.Google Scholar
5.Ahmed, S. S., Kim, D. M. and Shichijo, H., to be published.Google Scholar