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Co-Doping Characteristics of Si and Zn with Mg in P-Type GaN

Published online by Cambridge University Press:  03 September 2012

K.S. Kim ,
C.S. Oh ,
M.S. Han ,
C.S. Kim ,
G.M. Yang ,
J.W. Yang ,
C.-H. Hong ,
C.J. Youn ,
K.Y. Lim  and
H.J. Lee
K.S. Kim
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
C.S. Oh
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
M.S. Han
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
C.S. Kim
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
G.M. Yang
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Koreagyemo@moak.chonbuk.ac.kr
J.W. Yang
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
C.-H. Hong
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
C.J. Youn
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
K.Y. Lim
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
H.J. Lee
Affiliation:
Department of Semiconductor Science & Technology and Semiconductor Physics Research Center, Chonbuk National University, Chonju 561-756, Korea
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Abstract

We investigated the doping characteristics of Mg doped, Mg-Si co-doped, and Mg-Zn codoped GaN films grown by metalorganic chemical vapor deposition. We have grown p-GaN film with a resistivity of 1.26 Ωm and a hole density of 4.3 × 1017 cm−3 by means of Mg-Si co-doping technique. The Mg-Si co-doping characteristic was also explained effectively by taking advantage of the concept of competitive adsorption between Mg and Si during the growth. For Mg-Zn co-doping, p-GaN showing a low electrical resistivity (0.7 Ωm) and a high hole concentration (8.5 × 1017 cm−3) was successfully grown without the degradation of structural quality of the film. Besides, the measured specific contact resistance for Mg-Zn co-doped GaN film is 5.0 × 10−4 cm2, which is lower value by one order of magnitude than that for only Mg doped GaN film (1.9 × 10−3 Ωm2).

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 595: Symposium W – GaN and Related Alloys - 1999 , 1999 , F99W3.84
Copyright
Copyright © Materials Research Society 1999

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References

1. Yamamoto, T. and Yoshida, H.K., Jpn. J. Appl. Phys. 36, L180 (1997).Google Scholar
2. Brandt, O., Yang, H., Kostial, H., and Ploog, K.H., Appl. Phys. Lett. 69, 2707 (1996).Google Scholar
3. Kim, K.S., Oh, C.S., Lee, K.J., Yang, G.M., Hong, C.-H., Lim, K.Y., Yoshikawa, A., and Lee, H.J., J. Appl. Phys. 85 (1999) 8441.Google Scholar
4. CRC Handbook of Chemistry and Physics, 55th ed. (CRC, Boca Raton, FL, 1974).Google Scholar
5. Kaufmann, U., Kunzer, M., Maier, M., Obloh, H., Ramakrishnan, A., Santic, B., and Schlotter, P., Appl. Phys. Lett. 72, 1326 (1998).Google Scholar
6. Viswanath, A.K., Shin, E.-J., Lee, J.I., Yu, S., Kim, D., Kim, B., Choi, Y., and Hong, C.-H., J. Appl. Phys. 83, 2272 (1998).Google Scholar
7. Kim, J.K., Lee, J.-L., Lee, J.W., Shin, H.E., Park, Y.J., and Kim, T., Appl. Phys. Lett. 73, 2953 (1998).Google Scholar
8. Lester, L.F., Brown, J.M., Ramer, J.C., Zhang, L., Hersee, S.D., and Zolper, J.C., Appl. Phys. Lett. 69, 2737 (1996).Google Scholar