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Addressing the Problems of Agglomeration, Surface Roughness and Crystal Imperfection in Soi Films

  • S. Ramesh (a1), A. Martinez (a1), J. Petruzzello (a1), H. Baumgart (a1) and Emil Arnold (a1)...

Abstract

We have designed and experimentally tested, under a wide variety of laser recrystallization conditions, a reliable encapsulation structure that prevents agglomeration and enables recrystallization of SOT films over a 100% wafer area. Our experiments indicate that the wetting characteristics of the structure can also improve the surface planarity of the recrystallized silicon. We also report a dramatic reduction in defect density and the non - occurrence of the characteristic branched subgrain boundary pattern under appropriate conditions of laser recrystallization.

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[1] Pfeiffer, L., Paine, S., Gilmer, G.H., Saarloos, W.V., and West, K.W., Phys. Rev. Lett., Vol. 54, p. 1944 (1985).
[2] Arnold, E., Landman, U., Ramesh, S., Leudtke, W.D., Barnett, R.N., Proc. of MRS Fall Meeting (1985); Phys. Rev. Lett., Vol. 56, p. 155 (1986).
[3] Ramesh, S., Arnold, E. and Martinez, A., to be published.
[4] Celler, G.K., CRC Critical Reviews in Solid Stater and Materials Sciences, Vol.12 Issue 3 (1985), and references therein.
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[9] Ramesh, S., Martinez, A., Petruzzello, J. and Arnold, E., to be published.

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