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Temperature Distribution in InGaN-MQW LEDs Under Operation

Published online by Cambridge University Press:  03 September 2012

Veit Schwegler
Affiliation:
Dept. of Optoelectronics, University of Ulm, 89069 Ulm, Germany
Matthias Seyboth
Affiliation:
Dept. of Optoelectronics, University of Ulm, 89069 Ulm, Germany
Sven Schad
Affiliation:
Dept. of Optoelectronics, University of Ulm, 89069 Ulm, Germany
Marcus Scherer
Affiliation:
Dept. of Optoelectronics, University of Ulm, 89069 Ulm, Germany
Cristoph Kirchner
Affiliation:
Dept. of Optoelectronics, University of Ulm, 89069 Ulm, Germany
Markus Kamp
Affiliation:
Dept. of Optoelectronics, University of Ulm, 89069 Ulm, Germany
Ulrich Stempfle
Affiliation:
Dept. of Semiconductor Physics, University of Ulm, 89069 Ulm, Germany
Wolfgang Limmer
Affiliation:
Dept. of Semiconductor Physics, University of Ulm, 89069 Ulm, Germany
Rolf Sauer
Affiliation:
Dept. of Semiconductor Physics, University of Ulm, 89069 Ulm, Germany
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Abstract

The temperature distribution in InGaN-MQW light emitting diodes was examined during operation with spatially resolved micro-Raman and micro-Electroluminescence measurements. The experimental results were compared to finite element simulations. A good agreement between the different experimental and calculated data is found. Maximum operation temperatures up to 140 °C at a moderate forward currents of 30 mA are revealed by all three independent methods. Influences of substrate thickness, different substrates, and even bond-wires are shown.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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