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Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers

Published online by Cambridge University Press:  03 September 2012

Masayoshi Koike
Affiliation:
Optoelectronics, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452-8564, JAPAN
Shiro Yamasaki
Affiliation:
Optoelectronics, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452-8564, JAPAN
Yuta Tezen
Affiliation:
Optoelectronics, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452-8564, JAPAN
Seiji Nagai
Affiliation:
Optoelectronics, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452-8564, JAPAN
Sho Iwayama
Affiliation:
Optoelectronics, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452-8564, JAPAN
Akira Kojima
Affiliation:
Optoelectronics, Toyoda Gosei Co., Ltd., Haruhi-cho, Nishikasugai-gun, Aichi 452-8564, JAPAN
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Abstract

GaN-based short wavelength laser diodes are the most promising key device for a digital versatile disk. We have been improving the important points of the laser diodes in terms of optical guiding layers, mirror facets. The continuous wave laser irradiation at room temperature could be achieved successfully by reducing the threshold current to 60 mA (4 kA/cm2). We have tried to apply the multi low temperature buffer layers to the laser diodes for the first time to reduce the crystal defects.

Type
Research Article
Copyright
Copyright © Materials Research Society 1999

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References

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Room Temperature CW Operation of GaN-Based Blue Laser Diodes by GaInN/GaN Optical Guiding Layers
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