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Chemical Trends in Electronic Properties of Gold-3D Transition Metal Impurity Pairs in Silicon

Published online by Cambridge University Press:  15 February 2011

J. F. Justo
Affiliation:
Department of Nuclear Engineering, MIT, Cambridge, MA 02139
L. V. C. Assali
Affiliation:
Instituto de Física da Universidade de São Paulo, CP 66318, 05315–970, São Paulo, SP, BRAZIL
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Abstract

We report theoretical investigations of the chemical trends in the electronic properties of substitutional gold-interstitial transition-metal complexes in silicon. The results show that the stable pairs in trigonal symmetry are formed by a covalent mechanism which includes, besides Au and TM impurities, also the Si neighbors, rather than being derived from interactions between two electrostatically bound point charges.

Type
Research Article
Copyright
Copyright © Materials Research Society 1997

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