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Origin of ring defects in high In content green InGaN/GaN MQW: An Ultrasonic Force Microscopy Study

  • F. Shahedipour-Sandvik (a1), M. Jamil (a1), K. Topol (a1), J. R. Grandusky (a1), Kathleen A Dunn (a1), J. Ramer (a2) and V. N. Merai (a2)...

Abstract

Observation of GaN-based islands surrounded by V-defects in the barrier layer of green LED is reported for InGaN MQWs deposited under no hydrogen or at growth temperatures of less than 800°C. Nanoscale mechanical properties of the areas enclosed and outside of the ring defects does not show any appreciable variation as measured by UFM. Chemical etching of the MQW structure in addition to cross-sectional TEM analysis ruled out the possibility of growth of inversion domains of N-polar GaN in a Ga-polar GaN matrix.

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Origin of ring defects in high In content green InGaN/GaN MQW: An Ultrasonic Force Microscopy Study

  • F. Shahedipour-Sandvik (a1), M. Jamil (a1), K. Topol (a1), J. R. Grandusky (a1), Kathleen A Dunn (a1), J. Ramer (a2) and V. N. Merai (a2)...

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