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Role of interfacial thermal resistance and laser energy density during laser processing of copper-sapphire couples

Published online by Cambridge University Press:  31 January 2011

M.J. Godbole ,
A.J. Pedraza ,
D.H. Lowndes  and
J.R. Thompson Jr.
M.J. Godbole
Affiliation:
Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996-2200
A.J. Pedraza
Affiliation:
Department of Materials Science and Engineering, The University of Tennessee, Knoxville, Tennessee 37996-2200
D.H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6056
J.R. Thompson Jr.
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831-6056 and Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996-1200
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Abstract

The effect of the interfacial thermal resistance and the laser energy density on film morphology and the extent of evaporation was studied in the excimer laser processing of copper-sapphire couples. Copper films of 80 nm thickness were sputter-deposited on sapphire substrates and laser-irradiated with energy densities in the range of 0.2 to 3.5 J/cm2. The changes in film morphology and thickness as a function of laser energy density were analyzed by energy dispersive x-ray spectroscopy. Four regimes can be established as a function of the laser energy density. First, for low energy densities up to a critical value, the film is partially removed by thermal stresses. Second, as the energy density is increased above that critical value, larger portions of the film remain attached to the substrate. In this regime adhesion enhancement takes place. Third, a further increase in the energy density results in film evaporation. Finally, the decrease in the specific mass removal rate of copper is related to the formation of a laser generated plasma that shields the sample from the incoming radiation. In this last regime, an intermediate compound may form at the substrate surface. The data were correlated with results from a computer model of the heat flow during laser processing of metal-ceramic couples.

Type
Articles
Information
Journal of Materials Research , Volume 7 , Issue 4 , April 1992 , pp. 1004 - 1010
Copyright
Copyright © Materials Research Society 1992

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References

1.Pedraza, A. J., Godbole, M. J., Lowndes, D. H., and Thompson, J. R., Jr., J. Mater. Sci. 24, 115 (1989).CrossRefGoogle Scholar
2.Pedraza, A.J., Godbole, M.J., Kenik, E.A., Lowndes, D.H., and Thompson, J. R., Jr., J. Vac. Sci. Technol. A6 (3), 1763 (1988).CrossRefGoogle Scholar
3.Godbole, M.J., Pedraza, A.J., Lowndes, D.H., and Kenik, E.A., J. Mater. Res. 4, 1202 (1989).CrossRefGoogle Scholar
4.Pedraza, A.J., Laser Materials Processing, edited by Mazumder, J. and Mukherjee, K.N. (TMS, Warrendale, PA, 1989), p. 183.Google Scholar
5. A.J. Pedraza and L. Pike, to be published.Google Scholar
6.Swartz, E.T. and Pohl, R.O., Appl. Phys. Lett. 51 (26), 2200 (1987).CrossRefGoogle Scholar
7.Little, W.A., Can. J. Phys. 37, 334 (1959).CrossRefGoogle Scholar
8.Wefers, K. and Bell, G.M., Technical Paper No. 19, Alcoa Research Laboratory (1972).Google Scholar
9.American Institute of Physics Handbook, 3rd ed. (McGraw-Hill, New York, 1972).Google Scholar
10.Coates, R.B. and Andrews, J.W., J. Phys. F: Met. Phys. 8 (2), 277 (1978).CrossRefGoogle Scholar
11.Pedraza, A.J., Godbole, M.J., and Romana, L.J., in Structure and Properties of Interfaces in Materials, edited by Clark, W. A. T., Briant, C. L., and Dahmen, U. (Mater. Res. Soc. Symp. Proc. 238, Pittsburgh, PA, 1992).Google Scholar
12. Monte Carlo simulation program supplied by D. C. Joy, University of Tennessee, Knoxville, TN.Google Scholar
13.Russ, J. C., Fundamentals of Energy Dispersive X-Ray Analysis (Butterworth's, London, U.K., 1984), p. 64.Google Scholar
14.Godbole, M. J., Pedraza, A. J., Lowndes, D. H., and Thompson, J. R., Jr., in Phase Formation and Modification by Beam-Solid Interactions, edited by Was, G. S., Rehn, L. E., and Follstaedt, D. (Mater. Res. Soc. Symp. Proc. 235, Pittsburgh, PA, 1992).Google Scholar
15.Ready, J. F., Industrial Applications of Lasers (Academic Press, New York, 1978), p. 350.Google Scholar
16.Possin, G. E., Parks, H. G., and Chiang, S. W., in Laser and Electron-Beam Solid Interactions and Materials Processing, edited by Gibbons, J. F., Hess, L. D., and Sigmon, T. W. (Elsevier Science Publishing, New York, 1981), p. 73.Google Scholar