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Non-equilibrium defects in aluminum-doped zinc oxide thin films grown with a pulsed laser deposition method

  • Haruki Ryoken (a1), Isao Sakaguchi (a2), Naoki Ohashi (a2), Takashi Sekiguchi (a2), Shunichi Hishita (a2) and Hajime Haneda (a3)...

Abstract

Zinc oxide (ZnO) films doped with aluminum (Al) were deposited with a pulsed laser deposition technique to characterize the charge compensation phenomena in ZnO. In particular, oxygen radical (O*) irradiation during film deposition was used to modify the oxygen stoichiometry. Irradiation with O* decreased electron concentration in Al-doped ZnO. The lattice parameter of the resultant films also varied with the growth conditions. However, no obvious correlation between electron concentration and lattice parameter was found. The self-diffusion coefficients indicated the presence of non-equilibrium defects. The properties of the films are discussed from the viewpoint of non-equilibrium compensated defects detected in the diffusion measurements.

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Corresponding author

a)Address all correspondence to this author. e-mail: OHASHI.Naoki@nims.go.jp

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Keywords

Non-equilibrium defects in aluminum-doped zinc oxide thin films grown with a pulsed laser deposition method

  • Haruki Ryoken (a1), Isao Sakaguchi (a2), Naoki Ohashi (a2), Takashi Sekiguchi (a2), Shunichi Hishita (a2) and Hajime Haneda (a3)...

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