Hostname: page-component-848d4c4894-r5zm4 Total loading time: 0 Render date: 2024-07-07T15:05:32.219Z Has data issue: false hasContentIssue false
  • English
  • Français

Nickel silicon thin film as barrier in under-bump-metallization by magnetronsputtering deposition for Pb-free chip packaging

Published online by Cambridge University Press:  03 March 2011

Y. Li ,
J. Chen ,
C. Lazik ,
P. Wang ,
L. Yang ,
J. Yu ,
T. Sun  and
E. Ko
Y. Li*
Affiliation:
Applied Materials Inc., Santa Clara, California 95054
J. Chen
Affiliation:
Applied Materials Inc., Santa Clara, California 95054
C. Lazik
Affiliation:
Applied Materials Inc., Santa Clara, California 95054
P. Wang
Affiliation:
Applied Materials Inc., Santa Clara, California 95054
L. Yang
Affiliation:
Applied Materials Inc., Santa Clara, California 95054
J. Yu
Affiliation:
Applied Materials Inc., Santa Clara, California 95054
T. Sun
Affiliation:
Siliconware Precision Industries Co., Tantzu, Taichung, Taiwan, Republic of China
E. Ko
Affiliation:
Siliconware Precision Industries Co., Tantzu, Taichung, Taiwan, Republic of China
*
a)Address all correspondence to this author. e-mail: yanping_li@amat.com
Get access

Abstract

In the search for a Pb-free compatible under-bump-metallization (UBM) barrier material, magnetron sputtering of a nonmagnetic nickel silicon alloy (NiSi) target was used to deposit a low-stress polycrystalline NiSi thin film. In the reaction with SnAg3.0Cu0.5 solder, NiSi was found to have greatly reduced reaction and intermetallics (IMC) formation rates compared with sputtered NiV. A continuous layer of IMCs in NiSi UBM-solder joint remains stable after 10 reflows and 1000 h thermal aging tests, resulting in preferred bulk solder failure mode in ball shearing/pull testing. Our results demonstrate that NiSi is a highly promising thin film barrier material suitable for Pb-free solder bumping.

Keywords

Intermetallic alloysPackagingSputtering
Type
Articles
Information
Journal of Materials Research , Volume 20 , Issue 10 , October 2005 , pp. 2622 - 2626
Copyright
Copyright © Materials Research Society 2005

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Tu, K.N. and Zeng, K.: Tin-lead (SnPb) solder reaction in flip chip technology. Mater. Sci. Eng. Rep. 34, 1 (2001).CrossRefGoogle Scholar
2Zeng, K. and Tu, K.N.: Six cases of reliability study of Pb-free solder joints in electronic packaging technology. Mater. Sci. Eng. Rep. 38, 55 (2002).CrossRefGoogle Scholar
3Zeng, K., Vuorinen, V. and Kivilahti, J.K.: Interfacial reactions between lead-free SnAgCu solder and Ni(P) surface finish on printed circuit boards. IEEE Trans. Electron. Packag. Manuf. 25, 162 (2002).CrossRefGoogle Scholar
4Li, M., Zhang, F., Chen, W., Zeng, K., Tu, K., Balkan, H. and Elenius, P.: Interfacial microstructure evolution between eutectic SnAgCu solder and Al/Ni(V)/Cu thin films. J. Mater. Res. 17, 1612 (2002).CrossRefGoogle Scholar
5Yeh, E.C.C., Choi, W.J., Tu, K.N., Elenius, P. and Balkan, H.: Current-crowding-induced electromigration failure in flip chip solder joints. Appl. Phys. Lett. 80, 580 (2002).CrossRefGoogle Scholar
6Hansen, M.: Constitution of Binary Alloys, McGraw-Hill, New York, 1959 , 1965, 1969.Google Scholar
7Alam, M.O., Chan, Y.C. and Tu, K.N.: Elimination of Au-embrittlement in solder joints on Au/Ni metallization. J. Mater. Res. 19, 1303 (2004).CrossRefGoogle Scholar
8Chen, W.T., Ho, C.E. and Kao, C.R.: Effect of Cu concentration on the interfacial reactions between Ni and Sn–Cu solders. J. Mater. Res. 17, 263 (2002).CrossRefGoogle Scholar
9Zhang, F., Li, M., Chum, C.C. and Tung, C-H.: Effects of substrate metallizations on solder-underbump metallization interfacial reactions in flip-chip packages during thermal aging. J. Mater. Res. 18, 1333 (2003).CrossRefGoogle Scholar
10Ha, J., Oh, T. and Tu, K.: Effect of supersaturation of Cu on reaction and intermetallic compound formation between SnCu solder and thin film metallization. J. Mater. Res. 18, 2109 (2003).CrossRefGoogle Scholar
11Poate, J.M., Tu, K.N. and Mayer, J.W.: Thin Flms: Interdiffusion and Reactions (Wiley, New York, 1978), Chap. 7.Google Scholar