Hostname: page-component-7bb8b95d7b-s9k8s Total loading time: 0 Render date: 2024-09-21T07:56:52.932Z Has data issue: false hasContentIssue false
  • English
  • Français

Chalcogenide glasses Ge–Sn–Se, Ge–Se–Te, and Ge–Sn–Se–Te for infrared optical fibers

Published online by Cambridge University Press:  31 January 2011

I. Haruvi-Busnach ,
J. Dror  and
N. Croitoru
I. Haruvi-Busnach
Affiliation:
Department of Electron Devices, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69989, Israel
J. Dror
Affiliation:
Department of Electron Devices, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69989, Israel
N. Croitoru
Affiliation:
Department of Electron Devices, Faculty of Engineering, Tel-Aviv University, Ramat-Aviv 69989, Israel
Get access

Abstract

Chalcogenide glasses of the systems Ge–Sn–Se, Ge–Se–Te, and Ge–Sn–Se–Te have been prepared. Several compositions were found suitable for drawing fibers for CO2 laser radiation (λ = 10.6 μm) transmission. The glasses were characterized by x-ray diffraction, DSC (Differential Scanning Calorimetry), SEM with EDX analysis, FTIR spectrometry, density, and microhardness measurements. The glass transition temperature and microhardness of Ge–Se–Sn and Ge–Sn–Se–Te glasses decreased with increasing Sn content, for most of the samples. The region of high IR transparency of Ge–Se–Sn, Ge–Se–Te, and Ge–Sn–Se–Te glasses was slightly expanded (1–2 μm) toward longer wavelengths, compared to Ge–Se glasses, mainly for the glasses containing 70 at.% Se. The intensity of the impurity absorption peak of Ge–O (at λ ∼ 12.8 μm), which usually appears in Ge–Se glasses, was reduced or absent in Ge–Sn–Se–Te glasses. The best fibers were produced with the glass composition Ge–0.8Sn0.2Se3.5Te0.5. An attenuation of 20 dB/m at 10.6 μm, and a transmitted maximum power density of 2.4 ⊠ 106 W/m2 were measured. The mechanical and optical characteristics of these glasses have been related to the glasses structure. Corresponding to the reduced masses of the bonds formed in the Ge–Sn–Se–Te system (in the amorphous region), it is expected that the multiphonon edge is slightly shifted. As a consequence, as was measured, the transparency region has been expanded by less than 2 μm toward longer wavelengths.

Type
Articles
Information
Journal of Materials Research , Volume 5 , Issue 6 , June 1990 , pp. 1215 - 1223
Copyright
Copyright © Materials Research Society 1990

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1Alimpiev, S. S., Artjushenko, V. G., and Butvina, L. N., SPIE Proc. 906, 183.(1988).CrossRefGoogle Scholar
2Pinnow, D. A., Gentile, A. L., Standlee, A. G., and Temper, A. J., Appl. Phys. Lett. 33, 28 (1978).CrossRefGoogle Scholar
3Imura, Y., Okamura, Y., Komazawa, Y., and Ota, C., J. Appl. Phys. 19, L269 (1980).Google Scholar
4Harrington, J.A., Standlee, A.G., Pastor, A.C., and Deshazer, L.G., SPIE Proc. 484, 124 (1984).CrossRefGoogle Scholar
5Dror, J., Gannot, I., and Croitoru, N., SPIE Proc. 108, 112 (1989).CrossRefGoogle Scholar
6Mitachi, S. and Manabe, T., Jpn. J. Appl. Phys. 19, L313 (1980).CrossRefGoogle Scholar
7Drexhage, M. and Moynihan, C.T., Sci. Am. 11, 76 (1988).Google Scholar
8Hilton, A.R., Electron, J.. Mater. 2, 211 (1973).Google Scholar
9Savage, J. A., Webber, P. J., and Pitt, A. M., IR Phys. 20, 313 (1980).Google Scholar
10Bornstein, A., Croitoru, N., and Marom, E., SPIE Proc. 320, 402 (1982).Google Scholar
11Borisova, Z.U., Glassy Semiconductors (Plenum, New York and London, 1981), 1st ed., pp. 12, 104, 207.CrossRefGoogle Scholar
12Lines, M.E., Ann. Rev. Mater. Sci. 16, 113 (1986).CrossRefGoogle Scholar
13Klocek, P., Roth, M., and Rock, D., SPIE Proc. 572, 172 (1985).CrossRefGoogle Scholar
14Kanamori, T., Terunuma, Y., Takhashi, S., and Miyashita, T., J. Lightwave Technol. LT-2, 607 (1984).CrossRefGoogle Scholar
15Katsuyama, T., Ishida, K., Satoh, S., and Matsumura, H., Appl. Phys. Lett. 45, 925 (1984).CrossRefGoogle Scholar
16Pitt, N. J., Sapsford, G.S., Clapp, T.V., Worthington, R., and Scott, M. G., SPIE Proc. 618, 124 (1986).CrossRefGoogle Scholar
17Bornstein, A., Croitoru, N., and Marom, E., J. Non-Cryst. Solids 74, 57 (1985).CrossRefGoogle Scholar
18Sergin, P.P., Vasil'ev, L.N., and Borisova, Z.U., Izv. Akad. Nauk SSSR, Neorg. Mater. 8, 567 (1972).Google Scholar
19Fukunaga, T., Tanaka, Y., and Murase, K., Solid State Commun. 42, 513 (1982).CrossRefGoogle Scholar
20Stevens, M. and Boolchand, P., Phys. Rev. B 31, 981 (1985).CrossRefGoogle Scholar
21Croitoru, N. and Shamir, N., J. Lightwave Technol. LT-5, 1637 (1987).CrossRefGoogle Scholar
22Phillips, J.C., J. Non-Cryst. Solids 34, 153 (1979).CrossRefGoogle Scholar
23Boolchard, P. and Stevens, M., Phys. Rev. B 29, 1 (1984).CrossRefGoogle Scholar
24Lezal, S., Kasik, I., and Gotz, J., J. Non-Cryst. Solids 90, 557 (1987).CrossRefGoogle Scholar
25Hilton, A. R., Jones, C. C., and Brau, M., Phys. and Chem. Glasses 7, 105 (1966).Google Scholar
26Goyal, D.R., Sharma, A. K., and Mann, A. S., J. Mater. Sci. Lett. 7, 783 (1988).CrossRefGoogle Scholar
27Pauling, L., The Nature of the Chemical Bonds (Cornell University Press, 1960), 3rd ed., pp. 85, 92.Google Scholar