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Hot Isostatic Pressing to Increase Thermal Conductivity of Si3N4 Ceramics

Published online by Cambridge University Press:  31 January 2011

Koji Watari
Affiliation:
National Industrial Research Institute of Nagoya, Hirate-cho 1–1, Kita-ku, Nagoya 462, Japan
Kiyoshi Hirao
Affiliation:
National Industrial Research Institute of Nagoya, Hirate-cho 1–1, Kita-ku, Nagoya 462, Japan
Manuel E. Brito
Affiliation:
National Industrial Research Institute of Nagoya, Hirate-cho 1–1, Kita-ku, Nagoya 462, Japan
Motohiro Toriyama
Affiliation:
National Industrial Research Institute of Nagoya, Hirate-cho 1–1, Kita-ku, Nagoya 462, Japan
Shuzo Kanzaki
Affiliation:
National Industrial Research Institute of Nagoya, Hirate-cho 1–1, Kita-ku, Nagoya 462, Japan
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Abstract

Highly anisotropic Si3N4 ceramics were successfully fabricated by tape-casting of raw α–Si3N4 powders with β–Si3N4 single-crystal particles as seed particles and Y2O3 as an effective sintering aid, followed by hot isostatic pressing at a temperature of 2773 K for 2 h under a nitrogen gas pressure of 200 MPa. The microstructure consists of very large elongated grains (diameter ~10 μm; length of ~200 μm), highly oriented in the tape-casting direction. The thermal conductivity along this direction reaches 155 W m-1K-1 at room temperature, but varies significantly between room temperature and 1273 K. This thermal conductivity is closely related to (1) formation of extremely large elongated β–Si3N4 grains with a reduced amount of crystal defects due to the high-temperature firing and to (2) orientation of β–Si3N4 grains due to addition of seed particles and to tape-casting.

Type
Articles
Copyright
Copyright © Materials Research Society 1999

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