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RF-MEMS variable matching networks and switches for multi-band and multi-mode GaN power amplifiers

Published online by Cambridge University Press:  12 March 2014

Sascha A. Figur*
Affiliation:
EADS Innovation Works, München, Germany. Phone: +49 89 60729054
Friedbert van Raay
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics (IAF), Freiburg, Germany
Rüdiger Quay
Affiliation:
Fraunhofer Institute of Applied Solid-State Physics (IAF), Freiburg, Germany
Peter Lohmiller
Affiliation:
Ulm University, Institute of Electron Devices and Circuits, Ulm, Germany
Larissa Vietzorreck
Affiliation:
Technische Universität München, Lehrstuhl für Hochfrequenztechnik, München, Germany
Volker Ziegler
Affiliation:
EADS Innovation Works, München, Germany. Phone: +49 89 60729054
*
Corresponding author: S.A. Figur Email: sascha.figur@eads.net

Abstract

This work presents radio-frequency-microelectromechanical-system (RF-MEMS)-based tunable matching networks for a multi-band gallium nitride (GaN) power amplifer (PA) application. In the frequency range from 3.5–8.5 GHz return losses of 5–10 dB were measured for the input network, matching impedances close to the border of the Smith chart. For the output matching network return losses of 10–20 dB and insertion losses of 1.3–2 dB were measured. The matching networks can tune the PA to four different operating frequencies, as well as changing the transistor's mode of operation from maximum delivered-output-power to maximum power-added-efficiency (PAE), while keeping the operating frequency constant. Furthermore, different single pole double throw (SPDT)-switches are designed and characterized, to be used in frequency-agile transmit/receive-modules (T/R modules).

Type
Research Paper
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2014 

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References

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