Skip to main content Accessibility help
×
Home

Millimeter-wave hetero-integrated sources in InP-on-BiCMOS technology

  • Thomas Jensen (a1), Thualfiqar Al-Sawaf (a1), Marco Lisker (a2), Srdjan Glisic (a2), Mohamed Elkhouly (a2), Tomas Kraemer (a1), Ina Ostermay (a1), Chafik Meliani (a2), Bernd Tillack (a2), Viktor Krozer (a1) (a3), Olaf Krueger (a1) and Wolfgang Heinrich (a1)...

Abstract

The paper presents millimeter-wave (mm-wave) signal sources using a hetero-integrated InP-on-BiCMOS semiconductor technology. Mm-wave signal sources feature fundamental frequency voltage-controlled oscillators (VCOs) in BiCMOS, which drive frequency multiplier–amplifier chains in transferred-substrate (TS) InP-DHBT technology, heterogeneously integrated on top of the BiCMOS wafer in a wafer-level bonding process. Both circuits are biased through a single set of bias pads and compact low-loss transitions from BiCMOS to InP circuits and vice versa have been developed, which allows seamless signal routing through both technologies exhibiting 0.5 dB insertion loss up to 200 GHz. One VCO operates at 82 GHz with a tuning range of 600 MHz and an output power of approximately 8 dBm. A frequency doubler combined with this VCO circuit delivers 0 dBm at 164 GHz and a frequency tripler with a similar VCO delivers −10 dBm at 246 GHz. Another hetero-integrated W-band doubler–amplifier circuit demonstrates 12.9 dBm saturated output power with 5.9 dB conversion gain at 96 GHz. A direct comparison of the TS InP-DHBT MMIC with either silicon or traditional AlN carrier substrates shows the favorable properties of the hetero-integrated process discussed here. The results demonstrate the feasibility of hetero-integrated circuits operating well above 100 GHz.

Copyright

Corresponding author

Corresponding author: V. Krozer Email: viktor.krozer@fbh-berlin.de

References

Hide All
[1]Raman, S.; Chang, T.H.; Dohrman, C.L.; Rosker, M.J.: The DARPA COSMOS program: the convergence of InP and silicon CMOS technologies for high-performance mixed-signal, in Int. Conf. Indium Phosphide and Related Materials (IPRM), 2010.
[2]Kazior, T.E. et al. : A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates, in IEEE Microw. Symp. Technology Digest, 2009, 1113–1116.
[3]Hoke, W.E. et al. : Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit. J. Vac. Sci. Technol. B, 30 (2) (2012), 02B101-1-6.
[4]Nicolson, S.T. et al. : A low-voltage SiGe BiCMOS 77-GHz automotive radar chipset, microwave theory and techniques. IEEE Transact. 56 (5) Part: 1, (2008), 10921104.
[5]Sarkas, I.; Nicolson, S.T.; Tomkins, A.; Laskin, E.; Chevalier, P.; Sautreuil, B.; Voinigescu, S.P.: An 18-Gb/s, direct QPSK modulation SiGe BiCMOS transceiver for last mile links in the 70–80 GHz band. IEEE Journal Solid-State Circuits 45 (10), 19681980.
[6]Sano, K.; Fukuyama, H.; Nakamura, M.; Mutoh, M.; Nosaka, H.; Murata, K.: Wide dynamic range transimpedance amplifier IC for 100-G DP-QPSK optical links using 1-μm InP HBTs. IEICE Electron. Express, 9 (12) (2012), 10121017.
[7]Kozhuharov, R.; Bao, M.; Gavell, M.; Zirath, H.: A W- and G-band MMIC source using InP HBT technology, in Int. Microwave Symp., 2012.
[8]Takahashi, H.; Hirata, A.; Takeuchi, J.; Kukutsu, N.; Kosugi, T.; Murata, K.: 120-GHz-band 20-Gbit/s transmitter and receiver MMICs using quadrature phase shift keying, in 7th European Microwave Integrated Circuits Conf., October 2012, 313–316.
[9]Kraemer, T.; Rudolph, M.; Schmueckle, F.J.; Wuerfl, J.; Traenkle, G.: InP DHBT process in transferred substrate technology with fT and fmax over 400 GHz. IEEE Trans. Electron Devices 56 (9) (2009), 18971903.
[10]Krämer, T. et al. : InP-DHBT-on-BiCMOS technology with fT/fmax of 400/350 GHz for heterogeneous integrated millimeter-wave sources. IEEE Trans. Electron Devices, 60 (2013), 2209.
[11]Ostermay, I. et al. : Three-dimensional InP DHBT on SiGe BiCMOS integration by means of benzocyclobutene based wafer bonding for MM-wave circuits, Microelectron. Eng. (2013), http://dx.doi.org/10.1016/j.mee.2013.11.012, to be published.
[12]Ostermay, I. et al. : 200 GHz interconnects for InP-on-BiCMOS integration, in Int. Microwave Symp., 2013.
[13]Jensen, T. et al. : A 164 GHz hetero-integrated source in InP-on-BiCMOS technology, in Proc. EuMIC, European Microwave Integrated CIRCUITS Conf., 2013.
[14]Krozer, V. et al. : “InP on BiCMOS technology platform for millimeter-wave and THz MMIC” 2013 6th Millimeter Waves and THz Technology Workshop (UCMMT), UK, Europe, China; Publication Year: 2013, 1–2.

Keywords

Millimeter-wave hetero-integrated sources in InP-on-BiCMOS technology

  • Thomas Jensen (a1), Thualfiqar Al-Sawaf (a1), Marco Lisker (a2), Srdjan Glisic (a2), Mohamed Elkhouly (a2), Tomas Kraemer (a1), Ina Ostermay (a1), Chafik Meliani (a2), Bernd Tillack (a2), Viktor Krozer (a1) (a3), Olaf Krueger (a1) and Wolfgang Heinrich (a1)...

Metrics

Full text views

Total number of HTML views: 0
Total number of PDF views: 0 *
Loading metrics...

Abstract views

Total abstract views: 0 *
Loading metrics...

* Views captured on Cambridge Core between <date>. This data will be updated every 24 hours.

Usage data cannot currently be displayed