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Industrial GaN FET technology

  • Hervé Blanck (a1), James R. Thorpe (a1), Reza Behtash (a1), Jörg Splettstößer (a1), Peter Brückner (a1), Sylvain Heckmann (a1), Helmut Jung (a1), Klaus Riepe (a1), Franck Bourgeois (a1), Michael Hosch (a2), Dominik Köhn (a2), Hermann Stieglauer (a1), Didier Floriot (a3), Benoît Lambert (a3), Laurent Favede (a3), Zineb Ouarch (a3) and Marc Camiade (a3)...

Abstract

GaN technology has gained a lot of attention in Europe over the last few years for various domains including RF electronics. After a few years of active observation, United Monolithic Semiconductors (UMS) has taken the decision to introduce a GaN technology family in its portfolio. Based on its extensive experience of III–V technology and the intensive support and collaboration with partners and European research institutes, UMS has developed the capability to produce state-of-the-art GaN devices and circuits. The present paper will summarize the current status achieved and illustrate it with a few representative examples. Aspects covering material, devices, and circuits will be addressed.

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Corresponding author

Corresponding author: H. Blanck Email: herve.blanck@ums-ulm.de

References

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[1]Blanck, H.; Splettstößer, J.; Floriot, D.: GaN technology for RF electronics – development status in Europe, in Proceedings of Compound Semiconductor Integrated Circuits Symposium, Greensboro, NC, USA, 2009
[3]Defrance, N. et al. : AlGaN/GaN HEMT high power densities on SiC/SiO2/poly-SiC substrates. IEEE Electron. Dev. Lett., 30 (6) (2009), 596.
[4]Jung, H.; et al. : Reliability behavior of GaN HEMTs related to Au diffusion at the Schottky interface. Phys. Status Solidi C, 6 (S2) (2009), S976S979.
[5]Stieglauer, H.; Bödege, G.; Öttlin, D.; Ilgen, M.; Blanck, H.; Behammer, D.: Process benchmarking of SiC backside via manufacturing for GaN HEMT technology, in Proceedings of CS-MANTECH Conference, Tampa, FL, USA, 2009.
[6]Device Simulation Software ATLAS 2008, Silvaco, Santa Clara, CA 95054, USA, May 2008.
[7]Sanabria, C.; Chakraborty, A.; Xu, H.; Rodwell, M.J.; Mishra, U.; York, R.A.: The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs. IEEE Electron. Dev. Lett., 27 (1) (2006), pp. 1921.
[8]Hosch, M.; Behtash, R.; Thorpe, J.R.; Blanck, H.; Riepe, K.J.; Schumacher, H.: Gate leakage in AlGaN/GaN HEMTs utilizing a dielectric assisted gate process – a simulation study, in Proc. 18th European Workshop on Heterostructure Technology, Günzburg, Germany, 2009.
[9]Liu, Z.H.; Arulkumaran, S.; Ng, G.-I.: Temperature dependent microwave noise parameters and modeling of AlGaN/GaN HEMTs on Si substrate, in Proc. Int. Microwave Symp., Honolulu, Hawaii, 2007, 777.
[10]Bettidi, A.; et al. : X-Band GaN-HEMT LNA performance versus robustness trade-off, in Proc.e 4th European Microwave Integrated Circuits Conf., Rome, Italy, 2009, 439.
[11]Jardel, O.; De Groote, F.; Charbonniaud, C. et al. : A drain-lag model for AlGaN/GaN Power HEMTs, in Proc. Int. Microwave Symp., Honolulu, Hawaii, 2007, 601.

Keywords

Industrial GaN FET technology

  • Hervé Blanck (a1), James R. Thorpe (a1), Reza Behtash (a1), Jörg Splettstößer (a1), Peter Brückner (a1), Sylvain Heckmann (a1), Helmut Jung (a1), Klaus Riepe (a1), Franck Bourgeois (a1), Michael Hosch (a2), Dominik Köhn (a2), Hermann Stieglauer (a1), Didier Floriot (a3), Benoît Lambert (a3), Laurent Favede (a3), Zineb Ouarch (a3) and Marc Camiade (a3)...

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