1.Schuh, P, et al. (2009) X-band T/R-module front-end based on GaN MMICs. International Journal of Microwave and Wireless Technologies 1(4), 387–394.
2.Resca, D, et al. (2014) X-Band GaN power amplifier for future generation SAR systems. IEEE Microwave and Wireless Components Letters 24(4), 266–268.
3.Duême, P, et al. Overview of the MAGNUS project, in European Microwave Integrated Circuit Conference Proceedings, London, October 2016, 301–304.
4.Campbell, CF and Dumka, DC Wideband high power GaN on SiC SPDT Switch MMICs, in IEEE International Microwave Symposium Digest, Anaheim, May 2010, 145–148.
5.Bunz, B, et al. High power broadband GaN switch MMICs, in European Microwave Integrated Circuit Conference Proceedings, Paris, September 2015, 168–171.
6.Janssen, J, et al. X-Band robust AlGaN/GaN receiver MMICs with over 41 dBm power handling, in Compound Semiconductor Integrated Circuits Symposium Proceedings, Monterey, October 2008, 1–4.
7.Schuh, P and Reber, R Robust X-band low noise limiting amplifiers, in IEEE International Microwave Symposium Digest, Seattle, June 2013.
8.Lohmiller, P, et al. SiGe BiCMOS X-Band Transceiver-Chip for Phased-Array Systems, in European Microwave Conference Proceedings, Nuremberg, October 2017.
9.van Heijningen, M, et al. L-band AlGaN/GaN power amplifier with protection against load mismatch, in European Microwave Conference Proceedings, Nuremberg, (October 2013), 1379–1382.
10.Rudolph, M, et al. (2007) Analysis of the survivability of GaN low-noise amplifiers. IEEE Transactions on Microwave Theory and Techniques 55(1), 37–43.
11.Axelsson, O, et al. (2016) Impact of trapping effects on the recovery time of GaN based low noise amplifiers. IEEE Microwave and Wireless Components Letters 26(1), 31–33.
12.Masuda, S, et al. GaN single-chip transceiver frontend MMIC for X-Band applications, in IEEE International Microwave Symposium Digest, Montreal, June 2012, 1–3.
13.Biondi, A, et al. Compact GaN MMIC T/R module front-end for X-band pulsed radar, in European Microwave Integrated Circuit Conference Proceedings, London, October 2016, 297–300.
Patrick Schuh received the Dipl.-Ing. degree and the Dr.-Ing. degree in electrical engineering from the University of Ulm, Germany, in 1998 and 2003, respectively, and the Masters degree in business administration from the University of Applied Sciences Neu-Ulm, Germany, in 2004.
From 1998 to 2002, he was a Research Assistant at the Institute of Microwave Techniques, University of Ulm, where his main research topic has been electromagnetic simulations for packages. Since 2002 he has been with the T/R-Modules & MMICs research department at EADS (now HENSOLDT) in Ulm, Germany. Since 2009 he is heading the GaN and SiGe group inside the department. In 2013 he is appointed as Expert for GaN based circuits & RF power modules. His current area of interest is MMIC and T/R-module design, especially high power amplifiers in GaN and GaAs technology.