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GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project

  • Tibault Reveyrand (a1), Walter Ciccognani (a2), Giovanni Ghione (a3), Olivier Jardel (a4), Ernesto Limiti (a2), Antonio Serino (a2), Vittorio Camarchia (a3), Federica Cappelluti (a3) and Raymond Quéré (a1)...

Abstract

The present paper presents the transistor modeling work achieved in the GaN European project KorriGaN (“Key Organisation for Research in Integrated Circuits in GaN technology”). The KorriGaN project (2005–09) has released 29 GaN circuits such as high-power amplifiers (HPAs), low-noise amplifiers (LNAs), and switches. Modeling is one of the main key to reach successful designs. Therefore, nonlinear models of European GaN HEMT models have been developed. This work deals with characterization tools such as pulsed IV, pulsed [S] parameters, load-pull measurements, and measurement-based methods to perform GaN HEMT compact models parameters extraction. The present paper will describe the transistor modeling activities in KorriGaN for HPA designs (nonlinear models including trapping and/or self-heating effects) and LNA designs (nonlinear models and noise parameters).

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Corresponding author

Corresponding author: T. Reveyrand Email: reveyrand@gmail.com

References

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[1]Gauthier, G.; Mancuso, Y.; Murgadella, F.: KORRIGAN – a comprehensive initiative for GaN HEMT technology in Europe, in Gallium Arsenide and Other Semiconductor Application Symposium, 2005, 361363.
[2]Teyssier, J.-P.; Bouysse, P.; Ouarch, Z.; Barataud, D.; Peyretaillade, T.; Quere, R.: 40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization. IEEE Trans. Microwave Theory Tech., 46 (12) (1998), 20432052. doi: 10.1109/22.739281.
[3]Piotrowicz, S.; et al. : State of the art 58W, 38% PAE X-Band AlGaN/GaN HEMTs microstrip MMIC amplifiers, in Compound Semiconductor Integrated Circuits Symposium 2008, 2008. doi: 10.1109/CSICS.2008.39.
[4]Camarchia, V.; Cappelluti, F.; Pirola, M.; Guerrieri, S.D.; Ghione, G.: Self-consistent electrothermal modeling of Class A, AB, and B power GaN HEMTs under modulated RF excitation. IEEE Trans. Microwave Theory Tech., 55 (9) (2007), 18241831. doi:10.1109/TMTT.2007.903839
[5]Bonani, F.; Camarchia, V.; Cappelluti, F.; Guerrieri, S.; Ghione, G.; Pirola, M.: When self-consistency makes a difference. IEEE Microwave Mag., 9 (5) (2008), 8189. doi:10.1109/MMM.2008.927638
[6]Cappelluti, F.; Furno, M.; Angelini, A.; Bonani, F.; Pirola, M.; Ghione, G.: On the substrate thermal optimization in SiC-based backside-mounted high-power GaN FETs. IEEE Trans. Electron Dev., 54 (7) (2007), 17441752. doi: 10.1109/TED.2007.899380
[7]Joyce, W.: Thermal resistance of heat sinks with temperature dependent conductivity. Solid-State Electron., 18 (4) (1975), 321322. doi: 10.1016/0038-1101(75)90085-4
[8]Jardel, O.; et al. : An electrothermal model for AlGaN/GaN power HEMTs including trapping effects to improve large-signal simulation results on high VSWR. IEEE Trans. Microwave Theory Tech., 55 (12) (2007), 26602662. doi: 10.1109/TMTT.2007.907141
[9]Lane, R.Q.: The determination of device noise parameters. Proc. IEEE, 57 (8) (1969), 14611462.
[10]Pucel, R.A.; Haus, H.A.; Statz, H.: Signal and noise properties of GaAs microwave FET. Adv. Electron. Electron Phys., 38 (1975), 195265.
[11]Gupta, M.S.; Greiling, P.T.: Microwave noise characterisation of GaAs MESFET's: determination of extrinsic noise parameters. IEEE Trans. Microwave Theory Tech., 36 (4) (1988), 745751. doi: 10.1109/22.3580.
[12]Pospieszalski, M.W.: Modelling of noise parameters of MESFET's and MODFET's and their frequency and temperature dependence. IEEE Trans. Microwave Theory Tech., 37 (9) (1989), 13401350. doi: 10.1109/22.32217.
[13]Tasker, P.J.; Reinert, W.; Hughes, B.; Braunstein, J.; Schlechtweg, M.: Transistor noise parameter extraction using a 50 Ω measurement system, in IEEE MTT-S International Microwave Symposium Digest, 1993, 12511254. doi: 10.1109/MWSYM.1993.277100.
[14]Krausse, D.; et al. : Robust GaN HEMT low-noise amplifier MMICs for X-Band applications, in Gallium Arsenide Applications Symposium, 2004, 7174.
[15]Micovic, M.; et al. : GaN MMIC technology for microwave and millimeter-wave applications, in Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05. IEEE, 2005. doi: 10.1109/CSICS.2005.1531801.

Keywords

GaN transistor characterization and modeling activities performed within the frame of the KorriGaN project

  • Tibault Reveyrand (a1), Walter Ciccognani (a2), Giovanni Ghione (a3), Olivier Jardel (a4), Ernesto Limiti (a2), Antonio Serino (a2), Vittorio Camarchia (a3), Federica Cappelluti (a3) and Raymond Quéré (a1)...

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