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Self-consistent simulation of multi-walled CNT nanotransistors

Published online by Cambridge University Press:  05 November 2010

Davide Mencarelli*
Affiliation:
Università Politecnica delle Marche, Via Brecce Bianche 12, Ancona 60100, Italy. Phone: +39 071 2204840; Fax: +39 071 2204224.
Luca Pierantoni
Affiliation:
Università Politecnica delle Marche, Via Brecce Bianche 12, Ancona 60100, Italy. Phone: +39 071 2204840; Fax: +39 071 2204224.
Andrea D. Donato
Affiliation:
Università Politecnica delle Marche, Via Brecce Bianche 12, Ancona 60100, Italy. Phone: +39 071 2204840; Fax: +39 071 2204224.
Tullio Rozzi
Affiliation:
Università Politecnica delle Marche, Via Brecce Bianche 12, Ancona 60100, Italy. Phone: +39 071 2204840; Fax: +39 071 2204224.
*
Corresponding author: D. Mencarelli Email: d.mencarelli@univpm.it

Abstract

We present detailed results of the self-consistent analysis of carbon nanotube (CNT) field-effect transistors (FET), previously extended by us to the case of multi-walled/multi-band coherent carrier transport. The contribution to charge transport, due to different walls and sub-bands of a multi-walled CNT, is shown to be generally non-negligible. In order to prove the effectiveness of our simulation tool, we provide interesting examples about current–voltage characteristics of four-walled semi-conducting nanotubes, including details of numerical convergence and contribution of sub-bands to the calculation.

Type
Original Article
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

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References

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