Skip to main content Accessibility help
×
Home
Hostname: page-component-78dcdb465f-jxh9h Total loading time: 0.426 Render date: 2021-04-15T15:40:38.849Z Has data issue: true Feature Flags: { "shouldUseShareProductTool": true, "shouldUseHypothesis": true, "isUnsiloEnabled": true, "metricsAbstractViews": false, "figures": false, "newCiteModal": false, "newCitedByModal": true }

A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier

Published online by Cambridge University Press:  11 June 2010

Paul Saad
Affiliation:
Department of Microtechnology and Nanoscience, GigaHertz Centre, Chalmers University of Technology, 9 Kemivägen, 41296 Gothenburg, Sweden.
Christian Fager
Affiliation:
Department of Microtechnology and Nanoscience, GigaHertz Centre, Chalmers University of Technology, 9 Kemivägen, 41296 Gothenburg, Sweden.
Hossein Mashad Nemati
Affiliation:
Department of Microtechnology and Nanoscience, GigaHertz Centre, Chalmers University of Technology, 9 Kemivägen, 41296 Gothenburg, Sweden.
Haiying Cao
Affiliation:
Department of Microtechnology and Nanoscience, GigaHertz Centre, Chalmers University of Technology, 9 Kemivägen, 41296 Gothenburg, Sweden.
Herbert Zirath
Affiliation:
Department of Microtechnology and Nanoscience, GigaHertz Centre, Chalmers University of Technology, 9 Kemivägen, 41296 Gothenburg, Sweden.
Kristoffer Andersson
Affiliation:
Department of Microtechnology and Nanoscience, GigaHertz Centre, Chalmers University of Technology, 9 Kemivägen, 41296 Gothenburg, Sweden.
Corresponding
E-mail address:

Abstract

This paper presents the design and implementation of an inverse class-F power amplifier (PA) using a high power gallium nitride high electron mobility transistor (GaN HEMT). For a 3.5 GHz continuous wave signal, the measurement results show state-of-the-art power-added efficiency (PAE) of 78%, a drain efficiency of 82%, a gain of 12 dB, and an output power of 12 W. Moreover, over a 300 MHz bandwidth, the PAE and output power are maintained at 60% and 10 W, respectively. Linearized modulated measurements using 20 MHz bandwidth long-term evolution (LTE) signal with 11.5 dB peak-to-average ratio show that −42 dBc adjacent channel power ratio (ACLR) is achieved, with an average PAE of 30%, −47 dBc ACLR with an average PAE of 40% are obtained when using a WCDMA signal with 6.6 dB peak-to-average ratio (PAR).

Type
Original Article
Copyright
Copyright © Cambridge University Press and the European Microwave Association 2010

Access options

Get access to the full version of this content by using one of the access options below.

References

[1]Cripps, S.C.: RF Power Amplifiers for Wireless Communications, Artech House, Norwood, MA, 2006.Google Scholar
[2]Raab, F.H.: Class-F power amplifiers with maximally flat waveforms. IEEE Trans. Microw. Theory Tech., 45 (11) (1997), 20072012.CrossRefGoogle Scholar
[3]Pribble, W. et al. : Applications of SiC MESFETs and GaN HEMTs in power amplifier design, in IEEE MTT-S Int. Micro. Symp. Dig., vol. 3, 2002, 1819–1822.Google Scholar
[4]Nagy, W.; Brown, J.; Borges, R.; Singhal, S.: Linearity characteristics of microwave-power GaN HEMts. IEEE Trans. Microw. Theory Tech., 51 (2) (2003), 660664.CrossRefGoogle Scholar
[5]Inoue, A.; Ohta, A.; Goto, S.; Ishikawa, T.; Matsuda, Y.: The efficiency of class F and inverse class F amplifiers, in IEEE MTT-S Int. Micro. Symp. Dig., vol. 3, 2004, 1947–1950.Google Scholar
[6]Wei, C.J. et al. : Analysis and experimental waveform study on inverse class-F mode of microwave power FETs. IEEE Trans. Microw. Theory Tech., 2000, 525528.Google Scholar
[7]Goto, S. et al. : Effect of bias condition and input harmonic termination on high efficiency inverse class-F amplifiers, in Proc. 31st European Microwave Conf., 2001, 1–4.Google Scholar
[8]Woo, Y.Y.; Yang, Y.; Kim, B.: Analysis and experiments for high efficiency class-F and inverse class-F power amplifiers. IEEE Trans. Microw. Theory Tech., 54 (5) (2006), 19691974.Google Scholar
[9]Saad, P.; Nemati, H.; Thorsell, M.; Andersson, K.; Fager, C.: An inverse class-F GaN HEMT power amplifier with 78% PAE at 3.5 GHz, in Proc. 39th European Microwave Conf., 2009, 496–499.Google Scholar
[10]Bae, H.G., Negra, R., Boumaiza, S., Ghannouchi, F.: High-efficiency GaN class-E power amplifier with compact harmonic-suppression network, in Proc. 37th European Microwave Conf., 2007, 1093–1096.Google Scholar
[11]Aflaki, P.; Negra, R.; Ghannouchi, F.: Design and implementation of an inverse class-F power amplifier with 79% efficiency by using a switch-based active device model, in Radio and Wireless Symp., 2008 IEEE, 2008, 423–426.Google Scholar
[12]Schmelzer, D.; Long, S.: A GaN HEMT class F amplifier at 2 GHz with > 80% PAE. IEEE J. Solid-State Circuits, 42 (10) (2007), 21302136.CrossRefGoogle Scholar
[13]Al Tanany, A.; Sayed, A.; Boeck, G.: A 2.14 GHz 50 Watt 60% power added efficiency GaN current mode Class D power amplifier, in Proc. 38th European Microwave Conf., 2008, 432–435.Google Scholar
[14]Lee, Y.-S.; Jeong, Y.-H.: A high-efficiency class-E GaN HEMT power amplifier for WCDMA applications. IEEE Microw. Wirel. Compon. Lett., 17 (8) (2007), 622624.CrossRefGoogle Scholar
[15]Choi, H.; Shim, S.; Jeong, Y.; Lim, J.; Kim, C.D.: A compact DGS load-network for highly efficient class-E power amplifier, in Proc. 39th European Microwave Conf., 2009, 492–495.Google Scholar
[16]Lee, M.-W.; Lee, Y.-S.; Jeong, Y.-H.: A high-efficiency GaN HEMT hybrid class-E power amplifier for 3.5 GHz WiMAX applications, in Proc. 38th European Microwave Conf., 2008, 436–439.Google Scholar
[17]Raab, F.: Class-E, Class-C, and Class-F power amplifiers based upon a finite number of harmonics. IEEE Trans. Microw. Theory Tech., 49 (8) (2001), 14621468.CrossRefGoogle Scholar
[18]Negra, R.; Bachtold, W.: Lumped-element load-network design for class-E power amplifiers. IEEE Trans. Microw. Theory Tech., 54 (6) (2006), 26842690.CrossRefGoogle Scholar
[19]Negra, R.; Ghannouchi, F.; Bachtold, W.: Study and design optimization of multiharmonic transmission-line load networks for class-E and class-F K-Band MMIC power amplifiers. IEEE Trans. Microw. Theory Tech., 55 (6) (2007), 13901397.CrossRefGoogle Scholar
[20]Nemati, H.; Fager, C.; Thorsell, M.; Herbert, Z.: High-efficiency LDMOS power-amplifier design at 1 GHz using an optimized transistor model. IEEE Trans. Microw. Theory Tech., 57 (7) (2009), 16471654.CrossRefGoogle Scholar
[21]Rollett, J.: Stability and power-gain invariants of linear two ports. IEEE Trans. Circuit Theory, 9 (1) (1962), 2932.CrossRefGoogle Scholar
[22]Kim, J.; Konstantinou, K.: Digital predistortion of wideband signals based on power amplifier model with memory. Electron. Lett., 37 (23) (2001), 14171418.CrossRefGoogle Scholar

Full text views

Full text views reflects PDF downloads, PDFs sent to Google Drive, Dropbox and Kindle and HTML full text views.

Total number of HTML views: 4
Total number of PDF views: 33 *
View data table for this chart

* Views captured on Cambridge Core between September 2016 - 15th April 2021. This data will be updated every 24 hours.

Send article to Kindle

To send this article to your Kindle, first ensure no-reply@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about sending to your Kindle. Find out more about sending to your Kindle.

Note you can select to send to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be sent to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier
Available formats
×

Send article to Dropbox

To send this article to your Dropbox account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Dropbox.

A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier
Available formats
×

Send article to Google Drive

To send this article to your Google Drive account, please select one or more formats and confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your <service> account. Find out more about sending content to Google Drive.

A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier
Available formats
×
×

Reply to: Submit a response


Your details


Conflicting interests

Do you have any conflicting interests? *