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8 - Deterministic light–matter coupling with single quantum dots

from Part III - Optical properties of quantum dots in photonic cavities and plasmon-coupled dots

Published online by Cambridge University Press:  05 August 2012

By
P. Senellart
Edited by
Alexander Tartakovskii
P. Senellart
Affiliation:
Laboratoire de Photonique et de Nanostructures, France
Alexander Tartakovskii
Affiliation:
University of Sheffield
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Summary

In 1946, E. M. Purcell predicted that the radiative lifetime of an emitter is not an intrinsic property but can be modified by structuring the surrounding electromagnetic field [36]. By inserting a semiconductor quantum dot (QD) in an optical cavity, one can accelerate or inhibit its spontaneous emission. In the present article, we show that the QD spontaneous emission can be deterministically controlled to fabricate bright sources of quantum light.

QDs in cavities: basics, motivation, first demonstrations

Light-matter coupling

We note f the ground state of the QD and e its excited state. For a cavity mode close to resonance with the QD optical transition, we consider only the states with 0 or 1 photon in the cavity mode. The states ∣e, 0〉 and ∣ f, 1〉 are coupled through light–matter interaction, with a constant g, where hg = ∣〈e, 0∣ Ed∣ f, 1∣, with d the dipole of the optical transition e → f and E the electric field at the QD position.

Each of the states ∣e, 0 > and ∣ f, 1 > are also coupled to continua of states: continuum of the free-space optical mode, phonons of the semiconductor matrix, etc. [4]. Here, we consider only the coupling to the continuum of the free-space optical mode, related to the cavity losses, with a constant γc. When g << γc, the photon emitted by the recombination of an exciton efficiently escapes outside the cavity. The QD optical transition radiative recombination rate can be accelerated (Purcell effect) or inhibited.

Type
Chapter
Information
Quantum Dots
Optics, Electron Transport and Future Applications
 , pp. 137 - 152
Publisher: Cambridge University Press
Print publication year: 2012

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