Book contents
- Frontmatter
- Contents
- Preface
- Acknowledgments
- 1 RF and Microwave Power Transistors
- 2 Compact Modeling of High-Power FETs
- 3 Electrical Measurement Techniques
- 4 Passive Components: Simulation and Modeling
- 5 Thermal Characterization and Modeling
- 6 Modeling the Active Transistor
- 7 Function Approximation for Compact Modeling
- 8 Model Implementation in CAD Tools
- 9 Model Validation
- About the Authors
- Index
4 - Passive Components: Simulation and Modeling
Published online by Cambridge University Press: 19 August 2009
- Frontmatter
- Contents
- Preface
- Acknowledgments
- 1 RF and Microwave Power Transistors
- 2 Compact Modeling of High-Power FETs
- 3 Electrical Measurement Techniques
- 4 Passive Components: Simulation and Modeling
- 5 Thermal Characterization and Modeling
- 6 Modeling the Active Transistor
- 7 Function Approximation for Compact Modeling
- 8 Model Implementation in CAD Tools
- 9 Model Validation
- About the Authors
- Index
Summary
Introduction
In the design and modeling of a microwave packaged power transistor, linear models of the package and matching networks are combined with a nonlinear model of the transistor. The resulting performance is dictated by the impedances presented by the matching networks to the transistor at the fundamental, harmonic and low-frequency terminations. These matching networks are often composed of arrays of small-diameter bondwires, metaloxide-semiconductor (MOS) capacitors, and packages. The passive components provide the necessary low-loss impedance transformation essential for the successful operation of the RF power amplifier.
While the discussion here focuses on the modeling of the matching networks of a packaged LDMOS transistor used in wireless infrastructure applications, the techniques described are general enough to be applied to transistors that are based on other device technologies, or that are used for higher frequency applications. In this chapter, we will describe modeling techniques for each component of the matching network – that is, the package, bondwires, and internal matching capacitors, and show how modern computer-aided design tools can be used to support the modeling and design of the matching network.
Packages
Typically, the packages that are used for wireless infrastructure RF power amplifier applications are constructed from high-conductivity metals and low-loss dielectrics. The package is one component of the low-loss matching network located between the transistor die and the microstrip matching circuitry on the printed circuit board of the amplifier.
- Type
- Chapter
- Information
- Modeling and Characterization of RF and Microwave Power FETs , pp. 123 - 148Publisher: Cambridge University PressPrint publication year: 2007