Skip to main content Accessibility help
×
Hostname: page-component-848d4c4894-mwx4w Total loading time: 0 Render date: 2024-06-27T18:57:14.442Z Has data issue: false hasContentIssue false

11 - Dopant Profiling in Semiconductor Nanoelectronics

Published online by Cambridge University Press:  21 September 2017

T. Mitch Wallis
Affiliation:
National Institute of Standards and Technology, Boulder
Pavel Kabos
Affiliation:
National Institute of Standards and Technology, Boulder
Get access

Summary

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Chapter
Information
Publisher: Cambridge University Press
Print publication year: 2017

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

The International Technology Roadmap for Semiconductors 2.0: 2015.Google Scholar
Eller, B. S., Yang, J., and Nemanich, R. J., “Electronic Surface and Dielectric Interface States on GaN and AlGaN,” Journal of Vacuum Science and Technology A 31 (2013) art. no. 050807.Google Scholar
Gomila, G., Toset, J., and Fumagalli, L., “Nanoscale Capacitance Microscopy of Thin Dielectric Films,” Journal of Applied Physics 104 (2008) art. no. 024315.Google Scholar
Huber, H. P., Moertelmaier, M, Wallis, T. M., Chiang, C. J., Hochleitner, M., Imtiaz, A., Oh, Y. J., Schilcher, K., Dieudonne, M., Smoliner, J., Hinterdorfer, P., Rosner, S. J., Tanbakuchi, H., Kabos, P., and Kienberger, F., “Calibrated Nanoscale Capacitance Measurements Using a Scanning Microwave Microscope,” Review of Scientific Instruments 81 (2010) art. no. 113701.Google Scholar
Sze, S. M., The Physics of Semiconductor Devices (Wiley, 1981).Google Scholar
Taur, Y. and Ning, T. H., Fundamentals of Modern VLSI Devices (Cambridge University Press, 1998).Google Scholar
Nicollian, E. H. and Brews, J. R., MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, 1982).Google Scholar
Huber, H. P., Humer, I., Hochleitner, M., Fenner, M., Moertelmaier, M., Rankl, C., Imtiaz, A., Wallis, T. M., Tanbakuchi, H., Hinterdorfer, P., Kabos, P., Smoliner, J., Kopanski, J. J., and Kienberger, F., “Calibrated Nanoscale Dopant Profiling Using a Scanning Microwave Microscope,” Journal of Applied Physics 111 (2012) art. no. 014301.Google Scholar
Friedman, S., Yang, Y., Amster, O., and Stanke, F., “Characterizing Non-Linear Microwave Behavior of Semiconductor Materials with Scanning Microwave Impedance Microscopy,” 2016 IEEE MTT-S International Microwave Symposium Digest (2016) pp. 13.Google Scholar
Mönch, W., Semiconductor Surfaces and Interfaces (Springer, 2001).Google Scholar
Colleoni, D., Miceli, G., and Pasquarello, A., “Origin of Fermi-Level Pinning at GaAs Surfaces and Interfaces,” Journal of Physics: Condensed Matter 26 (2014) art. no. 492202.Google Scholar
Matey, J. R. and Blanc, J., “Scanning Capacitance Microscopy,” Journal of Applied Physics 57 (1985) pp. 14371444.Google Scholar
Huang, Y., Williams, C. C., and Smith, H.Direct Comparison of Cross-sectional Scanning Capacitance Microscope Dopant Profile and Vertical Secondary Ion-Mass Spectroscopy Profile,” Journal of Vacuum Science and Technology B 14 (1996) pp. 433436.Google Scholar
Huang, Y., Williams, C. C., and Slinkman, J., Applied Physics Letters 66 (1995) p. 344.Google Scholar
Kopanski, J. J., Marchiando, J. F., and Rennex, B. G., “Comparison of Experimental and Theoretical Scanning Capacitance Microscope Signals and Their Impact on the Accuracy of Determined Two-Dimensional Carrier Profiles,” Journal of Vacuum Science and Technology B 20 (2002) pp. 21012107.Google Scholar
Marchiando, J. F. and Kopanski, J. J., “Regression Procedure for Determining the Dopant Profile in Semiconductors from Scanning Capacitance Microscopy Data,” Journal of Applied Physics 92 (2002) pp. 57985809.Google Scholar
Marchiando, J. F., Kopanski, J. J., and Lowney, J. R., “Model Database for Determining Dopant Profiles from Scanning Capacitance Microscope Measurements,” Journal of Vacuum Science and Technology B 16 (1998) pp. 463470.Google Scholar
Stephenson, R., Verhulst, A., De Wolf, P., Caymax, M., and Vandervorst, W., “Nonmonotonic Behavior of the Scanning Capacitance Microscope for Large Dynamic Range Samples,” Journal of Vacuum Science and Technology B 18 (2000) pp. 405408.Google Scholar
Wang, L., Laurent, J., Chauveau, J. M., Sallet, V., Jomard, F., and Bremond, G., “Nanoscale Calibration of n-type ZnO Staircase Structures by Scanning Capacitance Microscopy,” Applied Physics Letters 107 (2015) art. no. 192101.Google Scholar
Sumner, J., Oliver, R. A., Kappers, M. J., and Humphreys, C. J., “Assessment of Performance of Scanning Capacitance Microscopy for n-type Gallium Nitride,” Journal of Vacuum Science and Technology B 26 (2008) pp. 611617.Google Scholar
Giannazzo, F., Raineri, V., Mirabella, S., Impellizzeri, G., Priolo, F., Fedele, M., and Mucciato, R., “Scanning Capacitance Microscopy: Quantitative Carrier Profiling Down to Nanostructures,” Journal of Vacuum Science and Technology B 24 (2006) pp. 370374.Google Scholar
Duhayon, N., et al. “Assessing the Performance of Two-Dimensional Dopant Profiling Techniques,” Journal of Vacuum Science and Technology B 22 (2004) pp. 385393.Google Scholar
Oliver, R. A., “Advances in AFM for the Electrical Characterization of Semiconductors,” Reports on Progress in Physics 71 (2008) art. no. 076501.Google Scholar
Gramse, G., Kasper, M., Fumagalli, L., Gomila, G., Hinterdorfer, P. and Kienberger, F., “Calibrated Complex Impedance and Permittivity Measurements with Scanning Microwave Microscopy,” Nanotechnology 26 (2015) art. no. 149501.Google Scholar
Farina, M., Mencarelli, D., Di Donato, A., Venanzoni, G., and Morini, A., “Calibration Protocol for Broadband Near-Field Microwave Microscopy,” IEEE Transactions on Microwave Theory and Techniques 59 (2011) pp. 27692776.Google Scholar
Weber, J. C., Blanchard, P. T., Sanders, A. W., Imtiaz, A., Wallis, T. M., Coakley, K. J., Bertness, K. A., Kabos, P., Sanford, N. A., and Bright, V. M., “Gallium Nitride Nanowire Probe for Near Field Scanning Microwave Microscopy,” Applied Physics Letters 104 (2014) art. no. 023113.Google Scholar
Kopanski, J. J., Marchiando, J. F, and Lowney, J. R., “Scanning Capacitance Microscopy Applied to Two-Dimensional Dopant Profiling of Semiconductors,” Materials Science and Engineering B – Solid State Materials for Advanced Technology 44 (1997) pp. 4651.Google Scholar
De Wolf, P., Stephenson, R., Trenkler, T., Clarysse, T., Hantschel, T., and Vandervorst, W., “Status and Review of Two-Dimensional Carrier and Dopant Profiling Using Scanning Probe Microscopy,” Journal of Vacuum Science and Technology B 18 (2000) pp. 361368.Google Scholar
Ban, D. Y., Wen, B. Y., Dhar, R. S., Razavipour, S. G., Cu, X., Wang, X. R., Wasilewski, Z., and Dixon-Warren, S., “Electrical Scanning Probe Microscopy of Electronic and Photonic Devices: Connecting Internal Mechanisms with External Measures,” Nanotechnology Reviews 5 (2016) pp. 279300.Google Scholar
Lee, D. T., Pelz, J. P., and Bhushan, B., “Instrumentation for Direct Low Frequency Scanning Capacitance Microscopy, and Analysis of Position Dependent Stray Capacitance,” Review of Scientific Instruments 73 (2002) pp. 35253533.Google Scholar
De Wolf, P., Clarysse, T., Vandervorst, W., and Hellemans, L., “Low Weight Spreading Resistance Profiling of Ultrashallow Dopant Profiles,” Journal of Vacuum Science and Technology B 16 (1998) pp. 401405.Google Scholar
Nonnenmacher, M., Oboyle, M. P., and Wickramasinghe, H. K., “Kelvin Probe Force Microscopy,” Applied Physics Letters 58 (1991) pp. 29212923.Google Scholar
Tanimoto, M. and Vatel, O., “Kelvin Probe Force Microscopy for Characterization of Semiconductor Devices and Processes,” Journal of Vacuum Science and Technology 14 (1996) pp. 15471551.Google Scholar
Binnig, G., Rohrer, H., Gerber, C., and Weibel, E., “Tunneling through a Controllable Vacuum Gap,” Applied Physics Letters 40 (1982) pp. 178180.Google Scholar
Stroscio, J. A., Feenstra, R. M., and Fein, A. P., “Electronic Structure of the Si(111) 2 × 1 Surface by Scanning-Tunneling Microscopy,” Physics Review Letters 57 (1986) pp. 25792582.Google Scholar
Koenraad, P. M. and Flatte, M. E., “Single Dopants in Semiconductors,” Nature Materials 10 (2011) pp. 91100.Google Scholar

Save book to Kindle

To save this book to your Kindle, first ensure coreplatform@cambridge.org is added to your Approved Personal Document E-mail List under your Personal Document Settings on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part of your Kindle email address below. Find out more about saving to your Kindle.

Note you can select to save to either the @free.kindle.com or @kindle.com variations. ‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi. ‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.

Find out more about the Kindle Personal Document Service.

Available formats
×

Save book to Dropbox

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Dropbox.

Available formats
×

Save book to Google Drive

To save content items to your account, please confirm that you agree to abide by our usage policies. If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account. Find out more about saving content to Google Drive.

Available formats
×