Copy number variation (CNV) is a very common type of gene variation with high frequency. In recent years, CNV has been paid more attention in various fields, especially in livestock and poultry breeding, which has promoted the progress of breeding. WW domain binding protein 1-like (WBP1L) is a protein coding gene, which plays an important role in cattle populations, and its function has been extensively studied, but it is not clear whether the copy number of the gene can affect the growth and development of cattle populations. In this study, CNV of WBP1L gene was detected in 732 cattle of seven breeds (Qinchuan cattle, QC; Pinan cattle, PN; Yuengling cattle, YL; Xianan cattle, XN; Jiaxian cattle, JX; natural Guyuan cattle, NGY; Jian cattle, JA). In addition, the relationship between CNV and growth phenotype of cattle was studied. The experimental data indicate that the copy number of WBP1L was obviously correlated with heart girth of PN cattle (**P < 0.01), rump length (RL) and body weight (BW) of PN cattle (*P < 0.05), withers height (WH), RL, body length, chest depth and BW of JX cattle (*P < 0.05), WH of NGY cattle (*P < 0.05) and WH of JA cattle (*P < 0.05). It was proved that CNV of WBP1L gene could be used as molecular marker locus for genetic breeding of the above four cattle breeds.

Interception by plant canopies during wind dispersal can affect the final destination of diaspores. However, how the interaction of wind speed, canopy type and diaspore attributes affects interception of diaspores by the plant canopy has rarely been studied. We investigated canopy interception for 29 species with different diaspore attributes, six canopy types and six wind speeds in controlled experiments in a wind tunnel. Shrub canopy interception of diaspores were controlled by wind speed and diaspore attributes, but the latter had a greater influence on canopy interception than the former. At low wind speed, diaspore wing loading had a large influence on canopy interception, whereas at high wind speed, diaspore projection area had a large influence. The chance of canopy interception at a particular wind speed was additionally affected by the type of canopy. This study increases our knowledge of the dispersal process, corrects the previous understanding of diaspore dispersal potential and improves the theoretical basis for predicting spatial pattern and dynamics of plant populations.

Isolated single quantum dots (QDs) enable the investigation of quantum-optics phenomena for the application of quantum information technologies. In this work, ultralow-density InAs QDs are grown by combining droplet etching epitaxy and the conventional epitaxy growth mode. An extreme low density of QDs (∼106 cm−2) is realized by creating low-density self-assembled nanoholes with the high temperature droplet etching epitaxy technique and then nanohole-filling. The preferred nucleation of QDs in nanoholes has been explained by a theoretical model. Atomic force microscopy and the photoluminescence technique are used to investigate the morphological and optical properties of the QD samples. By varying In coverages, the size of InAs QDs can be controlled. Moreover, with a thin GaAs cap layer, the position of QDs remains visible on the sample surface. Such a low density and surface signature of QDs make this growth method promising for single QD investigation and single dot device fabrication.

Motivated by the numerical study of spin-boson dynamics in quantum open systems, we present a convergence analysis of the closure approximation for a class of stochastic differential equations. We show that the naive Monte Carlo simulation of the system by direct temporal discretization is not feasible through variance analysis and numerical experiments. We also show that the Wiener chaos expansion exhibits very slow convergence and high computational cost. Though efficient and accurate, the rationale of the moment closure approach remains mysterious. We rigorously prove that the low moments in the moment closure approximation of the considered model are of exponential convergence to the exact result. It is further extended to more general nonlinear problems and applied to the original spin-boson model with similar structure.

In situ nano-TiB2 reinforced ultrafine-grained (UFG) Al composites were prepared via combined processes of flux-assisted synthesis (FAS) and asymmetrical rolling (ASR). The UFG Al composite with an ASR reduction ratio of 97% exhibits an average matrix grain size of 380 nm and an average TiB2 particulate size of 50 nm. Dislocation density in the composites is higher than that corresponding to the high purity (99.99 wt%) Al under identical processing conditions. The yield and ultimate tensile strength values of the UFG Al composites processed with an ASR reduction ratio of 97% are approximately 9 and 5 times higher relative to those of the initial coarse-grained Al, respectively. Moreover, the UFG Al composite with an ASR reduction ratio of 97% exhibits a higher elongation than that corresponding to the UFG pure Al under identical processing conditions, suggesting that nanoparticulates contribute to the overall plastic deformation when the matrix grains are refined to the UFG regime. Moreover, analysis of the strengthening behavior reveals no clear evidence that Orowan strengthening contributes significantly to the overall yield strength of the Al nanocomposites studied herein.

In this article, an alternative strain-free growth mode is presented where GaAs coupled-quantum dots are grown on lattice matched AlGaAs. The coupled quantum dots were grown at 550 °C in a molecular beam epitaxy system. The GaAs quantum dots were characterized by using a photoluminescence technique and an atomic force microscope. The photodetector was fabricated into normal incident configuration and photoconductivity spectra were measured covering the mid-infrared spectrum of 2.0 – 8.0 micron (intersubband transitions) and the visible-near-infrared spectrum of 0.5 – 0.9 micron (interband or exciton transitions). The photoresponse spectra in mid-infrared spectral range were found to exist at temperatures lower than 80 K, while the photoresponse spectra in the visible-near-infrared range were observed at temperatures as high as 300 K.

In this work, we design and fabricate a GaAs quantum ring infrared photodetector. The lattice matched GaAs/Al0.3Ga0.7As quantum rings are grown by using molecular beam epitaxy technique. The morphology of the quantum rings are characterized by an atomic force microscopy. Normal incident configured photodetectors are fabricated by standard photolithography. The photoresponse spectra are measured by a Fourier transform infrared spectrometer and exhibit two broad bands in visible-near-infrared and mid-infrared spectral range. Using quantum rings as absorption medium, we observed visible-near-infrared response at a temperature as high as 300 K while mid-infrared response up to 140 K.

We have studied the temperature dependence of CER spectra of layered InGaAs QWRs and QDCs and found strain-induced splitting of lh and hh states occur in both InGsAs and GaAs layers. By fitting experimental data using Varshni law and Bose-Einstein type relation, various parameters are obtained, which are similar to those of bulk GaAs. We pointed out that a caution must be excised when extracting the electron-phonon interaction parameters by subtracting the thermal dilation part from the experimental data of the embedded semiconductor microstructures because in these structures the temperature-induced lattice-dilation may produce additional strain besides the lattice mismatch.

The optical absorption spectra of intersubband transitions in In0.3Ga0.7As/GaAs multiple quantum dots (MQDs) grown by molecular beam epitaxy were investigated. By varying the number of In0.3Ga0.7As monolayers deposited, a series of samples with varying dot sizes ranging from 10 – 50 monolayers were obtained. The quantum dots grown with size less than 15 monolayers or more than 50 monolayers did not yield any observable measurements of intersubband transition. This suggests that there exist a critical upper and lower limit of In0.3Ga0.7As quantum dots for infrared detectors. A wavelength range of 8.60 – 13.70 μm is achieved for structures grown with the above monolayers range. The theoretical line-shape of the intersubband transition absorption was compared to the experimental measurements. From the lineshape, it was deduced that bound-to-continuum transtition is present in thick quantum dots and bound-to-bound transition is present in thinly grown quantum dots.

We report on intersubband transitions in InxGa1-xAs/AlGaAs multiple quantum wells (MQWs) grown by molecular beam epitaxy. The conduction band offset for this material system is larger than that of the well known GaAs/AlGaAs system, thus making it possible to design, grow, and fabricate quantum well infrared photodetectors operational beyond the 14 μm spectral region with minimized dark current. We have grown InxGa1-xAs/AlGaAs MQWs with indium compositions ranging from x = 0.08 to 0.20 verified by in situ RHEED oscillations, band offset measurements, and high-resolution X-ray diffraction. Band-to-band transitions were verified by photoluminescence measurements, and intersubband transitions were measured using Fourier transform infrared (FTIR) spectroscopy. Due to the high strain and introduction of dislocations associated with the high indium content, wells with indium compositions above ∼ 0.12 did not result in intersubband transitions at silicon doping levels of 2×1018 cm-3. A thick linear graded InxGa1-xAs buffer was grown below the MQW structures to reduce the strain and resulting dislocations. Intersubband transitions were measured in InxGa1-xAs wells with indium compositions of x = 0.20 and greater when grown on top of the linear graded buffer. In addition to these results, FTIR measurements on InGaAs/AlGaAs MQW multi-color, long-wavelength infrared detector structures are reported.

Molecular beam epitaxy growth of lattice mismatched In0.53Ga0.47As / GaAs(100) system is studied by in situ scanning tunneling microscope (STM) and reflection high energy electron diffraction. InGaAs layers with a thickness ranging up to 250 nm do not exhibit a smooth surface when grown under In-rich conditions. RHEED and STM confirm the well-ordered (4×2) reconstruction and mono-layer steps associated with this unique planar growth mode. Large STM scans reveal a characteristic morphology of rectangular shaped islands distributed on large flat terraces which are typically more than 300 nm width but only mono-layer steps.

A five-year cooperative research program has been carried out by China Institute for Radiation Protection and Japan Atomic Energy Research Institute to develop safety assessment methodology for disposal of low level radioactive waste. Migration behavior of radionuclides 3H and 85Sr through field tests, simulation tests in the laboratory and determination of distribution coefficients is discussed and analyzed in this paper. The results show that the retardation coefficients, Rd, from field tests are about 0.08−3.3 times those from simulation tests and Rd from batch tests are 1.1−44 times those from field tests for 85Sr and loess medium. It was observed from field tests that radionuclides moved mainly downward under artificial sprinkling and a part of them moved up besides downward under natural rain condition. In addition, it was discovered that the retardation coefficient, Rd , increases with velocity of unsaturated water flow, u, in the analysis.