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α-Bi2O3 thin films were deposited on different substrates by atomic layer deposition method. The results of X-ray diffraction, high-resolution transmission electron microscopy and X-ray photoelectron spectroscope correspond to α-Bi2O3. The Fourier transform infrared spectroscopy analyses indicate that the reaction is rather complete during the deposition. Optical properties of the films have been investigated using ultraviolet-infrared transmittance spectra in the temperature range of 8–300 K. It is found that the band gap Eg decreases from 3.12 to 3.03 eV with the temperature. The parameters αB and ΘB of the Bose-Einstein model are 69.3 meV and 293.9 K, respectively. The band narrowing coefficient dEg/dT is −0.435 meV/K at room temperature. The present results can be considerable for future application of Bi2O3-based electro-optic and wide temperature range optoelectronic devices.
The structure and properties of HfO2 films deposited by plasma assisted reactive pulsed laser deposition and annealed in N2 were studied upon thermal annealing as well as the evaluation of thermal stability by Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and optical transmission measurements. The as-deposited HfO2 films appear predominantly monoclinic with an amorphous matrix which becomes crystallized after high-temperature annealing. No interfacial SiOx is observed for the as-deposited films on Si. The deposited HfO2 films exhibit good thermal stability and show excellent transparency in a wide spectral range with optical band gap energies of 5.65–5.73 eV depending on annealing temperature. An improvement in the optical properties by high-temperature annealing is also observed.
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