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ZnO (ZO) and Aluminum (Al) doped ZnO (AZO) films were grown on sapphire substrate via oxygen radical assisted molecular beam epitaxy (MBE) technique. The results of XRD measurement and temperature dependent Hall measurement confirmed that the AZO films were typically highly degenerate semiconductor with good crystallinity. The resistivity of these films were closed to the theoretical lower limit. The optical properties of these films were investigated by photoluminescence (PL) spectra and absorption spectra. Strong band-edge emission was observed in the AZO films with good crystallinity in spite of high carrier concentration more than 1020 cm-3. A sift of absorption edge to higher energy side and a gradual increase of the absorption was observed for the AZO film.
The solubility of UO2 (s) was examined in dilute NaCl solutions at room temperature and in the pH range from 2 to 12. Dissolution equilibrium showed good agreements between the data obtained by oversaturation and undersaturation experiments.
The dissolution reactions that control the solubility of U[IV] are estimated as UO2 (s) + 4H+ → U4+ + 2H2O and UO2 (s) + 2H2O → U(OH)4°. The log K at zero ionic strength are yielded 0.34 ± 0.4 and −8.7 ± 0. 4, respectively. The hydrolysis constant (log β14) is calculated −9.0 ± 0.5 for the hydrolysis reaction of U4+ + 4H2) → U(OH)4° + 4H+. Contribution of the other uranium species to the solubility are of minor importance.
The crystallization of the precipitations of U02 (s) progressed gradually in the oversaturation experiments. Nevertheless the progress of crystallization had little effect on the solubility.
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