To save content items to your account,
please confirm that you agree to abide by our usage policies.
If this is the first time you use this feature, you will be asked to authorise Cambridge Core to connect with your account.
Find out more about saving content to .
To save content items to your Kindle, first ensure firstname.lastname@example.org
is added to your Approved Personal Document E-mail List under your Personal Document Settings
on the Manage Your Content and Devices page of your Amazon account. Then enter the ‘name’ part
of your Kindle email address below.
Find out more about saving to your Kindle.
Note you can select to save to either the @free.kindle.com or @kindle.com variations.
‘@free.kindle.com’ emails are free but can only be saved to your device when it is connected to wi-fi.
‘@kindle.com’ emails can be delivered even when you are not connected to wi-fi, but note that service fees apply.
We have succeeded in making high resistive AlxGa1−xAs by oxygen doping (AlxGa1−xAs:O) and applying them to buffer layer for power metal-semiconductor field effect transistor (MESFET). Samples of Al0.3Ga0.7As:O were prepared by metalorganic vapor phase epitaxy (MOVPE). Oxygen-related levels in A10.3Ga0.7As:O were investigated by applying isothermal capacitance transient spectroscopy (107S) to MIS (Al/Al0.3Ga0.7As:O/n-GaAs) diodes. A breakdown voltage and a two terminal gate breakdown voltage of the MESFET with the Al0.3Ga0.7As:O buffer layer became higher as increasing in the intensity of oxygen related peak in the ICTS spectra. These results indicate that the electrically active oxygen in the Al1−xGa1−xAs:O is an important factor for the device characteristics.
Email your librarian or administrator to recommend adding this to your organisation's collection.