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Carbon nitride nanocrystals were synthesized on Co/Ni-covered Si(100) wafers using a nitrogen-atom-beam-assisted pulsed laser ablation deposition method. Transmission electron miscroscopy, x-ray diffraction, and Raman spectroscopy showed that as-deposited films were constructed primarily from nanometer-sized β-C3N4 and CNx crystallites. The co-catalyzation by the cobalt and nickel in the synthesis process is considered to play an important role in the formation of nanocrystalline β-C3N4. The reasons for the formation of carbon nitride nanocrystals were analyzed.
Diamond was deposited on smooth Si3N4-coated Si substrates using hot-filament chemical vapor deposition (CVD). Prior to diamond deposition, the substrates were pretreated under high temperature (700–900 °C) by decomposed pure hydrogen. The experimental results show that these pregrowth processes at a substrate temperature of 850 °C enhanced the diamond nucleation on Si3N4. This indicated that decomposed hydrogen acted on the substrate to produce active centers (<100 nm), which promoted diamond nucleation. It has also been suggested that Si3N4 coating can inhibit carbon transport into the substrate, and it is beneficial to the diamond nucleation.
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