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Band-GaP Energy and Physical Properties of InN Grown by RF-Molecular Beam Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 798 / 2003
- Published online by Cambridge University Press:
- 01 February 2011, Y12.1
- Print publication:
- 2003
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The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/sapphire Templates
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 5 / Issue S1 / 2000
- Published online by Cambridge University Press:
- 13 June 2014, pp. 789-795
- Print publication:
- 2000
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The Effect of Nitrogen Ion Damage on the Optical and Electrical Properties of MBE GaN Grown on MOCVD GaN/Sapphire Templates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 595 / 1999
- Published online by Cambridge University Press:
- 03 September 2012, F99W11.56
- Print publication:
- 1999
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Structural Analysis of GaN and GaN/InGaN/GaN DH Structures on Sapphire (0001) Substrate Grown by MOCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 441
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- 1996
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Growth of GaN by Sublimation Technique and Homoepitaxial Growth by MOCVD
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 15
- Print publication:
- 1996
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