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The acceptor binding energy is calculated to find out the best acceptor impurity in InN, GaN and AlN. Be is predicted to be the shallowest acceptor and the next are Mg and Zn. Group IV elements such as C or Si are very deep. Band lineup is calculated to be ΔEc : ΔEv = 2.1 eV : 0.76 eV = 0.73 : 0.27 = 2.8 : 1 for GaN/AlN and ΔEc : ΔEv = 0.88 eV : 0.66 eV = 0.57 : 0.43 = 1.3 : 1 for GaN/InN. GaN is grown on GaAs and GaP-coated Si substrate by MOCVD. GaAs intermediate layer gives better GaN compared to GaP intermediate layer. It is suggested that the lower bulk modulus of GaAs than that of GaP gives this difference.
UCGAS (undercut GaAs on Si) structures in which a part of the GaAs layer is separated from the Si substrate are newly developed to reduce both the thermal stress and the defect density. The stress distribution in the fabricated structures is evaluated by photoluminescence. Quite a good agreement between the measured and the analyzed distributions is obtained, and the stress in UCGAS is less than 1/10of that in planar GaAs on Si. The EPD (etch pit density) in UCGAS after thermal cycle annealing is also less than 1/10of that in the planar layer. UCGAS-LED is fabricated for the first time and tested. The UCGAS-LED emits in 7 meV shorter wavelength and has longer lifetime compared to the mesa-type LED fabricated from the same wafer.
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