Photolithographic processing capabilities of ion implanted polymer (IIP) films spin-coated onto silicon substrates were evaluated to determine the optimum conditions for producing stable, small geometry devices. Films which had a thickness approximately equivalent to or less than the mean range of ions in the polymer had good quality and stability, and could be patterned without change of conductivity to form small geometry resistors with dimensions of 10 to 50 micrometers. Sixteen-element, packaged resistor arrays were produced from ion implanted poly(styrene-acrylonitrile) films. High quality films with resistivities from 400 ohms/square to 10 megohms/square could be produced by the ion implantation technique. Suspended conducting polymer bridges were formed from IIP resistors by etching of a sacrificial layer underlying the IIP film. Electrical and mechanical properties of the bridges are presented.