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We have analyzed Tb L3-edge x-ray absorption near-edge structure spectra of Tb-doped phosphor compounds for plasma display panel applications. Intensity and lifetime of the green emission from the Tb3+:5D4→7F5 transition were measured with respect to nominal terbium concentration in the host compounds, i.e., YBO3, YPO4,and Y4Al2O9, all of which were made through the solid-state reaction. Typical concentration quenching was evident on the fluorescence intensity and the fluorescing level lifetime in our samples. From the analyses of white line absorption peaks at TbL3-edge, it was verified that terbium is essentially trivalent in all the samples, even invery highly concentrated ones. Thus, this implies that the concentration quenching was not caused by presence of mixed-valent states of terbium. Instead, it is believed that anonradiative energy transfer route among Tb3+ ions might be responsible for thebehavior.
Selective chemical etching and atomic force microscope (AFM) examination has been performed to delineate two-dimensional (2-D) dopants profiles of p/n-type well and junction areas. Selectivity strongly depended on the types of dopants and the ratio of etching solutions. Calibration showed that the carrier concentrations in both p/n-type regions could be delineated down to a level of ∼1×1017/cm3. The AFM-induced profiles were compared with the calculated data provided by the 2-D process simulators such as TRIM and SUPREM-IV.
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