First-principles calculations are presented for various native point defects in ZnGeP2 us-ing a full-potential linearized muffin-tin orbital method in the local density approximation to density functional theory. Under Zn-poor conditions, the lowest Gibbs energy defects are found to be the Gezn antisite and Vz
. The Va
is found to have high energy of formation under any chemical potential conditions and is unstable towards formation of a Vz
pair. It is shown that the V
cannot account for the ALI EPR spectrum commonly associated with this vacancy and an alternative model consisting of a Vz
is tentatively proposed.