Cobalt doped ZnO (ZnO:Co) films with a 1 at% doping rate have been successfully grown on (100) oriented p type Si substrates by radiofrequency magnetron sputtering. Post annealing treatments at 973 K for various short periods have been carried out and structural, optical and electrical properties of the films have been investigated. Upon rapid annealing, the dopant distribution in the film has been found homogeneous. The annealing improves the (002) texture of the film and the mean column width increases with the annealing duration from 60 nm up to 95 nm. The lattice parameter of the ZnO:Co films decreases upon annealing and approaches that of bulk ZnO. The photoluminescence (PL) study reveals that the Co2+ ions can be excited directly or through a transfer mechanism from the matrix. The PL intensity decreases with the annealing time suggesting a diffusion process of the dopant impeding the Co2+ emission. At last, the electrical conductivity reaches values compatible with potential electroluminescent applications of the ZnO:Co films.

Microstructral and charge-trap properties of single Hf-silicate dielectric films are presented versus annealing treatment. The as-grown films were found to be homogeneous and amorphous. It is shown that annealing treatment results in the formation of alternated Hf-rich and Si-rich layers. The mechanism responsible for this phenomenon is found to be surface directed spinodal decomposition. The increase of annealing temperature up to 1000-1100°C resulted in the crystallization of Hf-rich phase. The stability of its tetragonal phase caused an enhancement of film permittivity was observed. The evolution of charge trapping properties of the films results in the memory effect which nature was discussed.

Structural, optical and luminescent properties of Si-rich HfO2 films fabricated by RF magnetron sputtering were investigated versus annealing treatment. Pronounced phase separation process occurred at 950-1100°C and resulted in the formation of hafnia and silica phases, as well as pure silicon clusters. An intense light emission of annealed samples in visible spectral range was obtained under broad band excitation. It was ascribed to exciton recombination inside silicon clusters as well as host defects. To confirm the formation of Si clusters, the structures were co-doped with Er3+ ions and effective light emission at 1.54µm was obtained under non-resonant excitation due to energy transfer from Si clusters towards Er3+ ions. The interaction of Si clusters, host defects and Er3+ ions under is discussed.

Hydrogenated nanocrystalline silicon carbide (nc-SiC:H) thin films were prepared by reactive magnetron sputtering. Deposition was achieved in a plasma of argon (Ar) and an hydrogen (H2) gas mixture with various H2 dilution percentages (10–80% H2) at a fixed substrate temperature of 500 °C. In order to describe the local bonding and the relative proportion of the different complexes formed during growth, the films were investigated by means of Fourier Transform Infrared absorption and Raman spectroscopy. Other structural features were analyzed by AFM measurements, electron diffraction and high resolution transmission electron microscopy observations. Optical and electrical properties of the films were also characterized. This study shows that hydrogen dilution plays an important role on the microstructure of the films as well as on their properties. The highest refractive index was obtained for a 60% ratio of hydrogen in the plasma and the highest dark conductivity found was 2.03 × 10−4 Ω−1 cm−1. A close relationship between the Si-H bond content and the conductivity is confirmed.

We discuss the fabrication and characterization of undoped hydrogenated and crystallized silicon thin films grown by reactive magnetron sputtering at growth rate of about 2 Å/s and at a temperature as low as 100 °C for various ratios of hydrogen dilution in the gas phase mixture (argon + x% hydrogen). Combined infrared absorption and Raman scattering spectroscopy techniques as well as conventional and high resolution transmission electron microscopy and stress measurements are used to fully characterize the films. In this temperature range, a minimum hydrogen dilution of 30% with respect to the plasma mixture (argon + hydrogen) is necessary to produce nanocrystalline films with crystalline volume fraction of about 65%. Moreover, these films are found to promote much lower stress intensity than those reported in previous works. The nature and strength of the stresses are dependent on the film microstructure.


It is well established that the response of devices based on the giant magnetoresistance (GMR) effect depends critically on film microstructure, with parameters such as interfacial abruptness, the roughness and waviness of the layers, and grain size being crucial. Such devices have applications in information storage systems, and are therefore of great technological interest as well as being of fundamental scientific interest. The layers must be studied at high spatial resolution if the microstructural parameters are to be characterized with sufficient detail to enable the effects of fabrication conditions on properties to be understood, and the techniques of high resolution electron microscopy, transmission electron microscopy chemical mapping, and atom probe microanalysis are ideally suited. This article describes the application of these techniques to a range of materials including spin valves, spin tunnel junctions, and GMR multilayers.